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参数资料
| 型号： | MMDF2N02ER2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 3.6 A, 25 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 4/10页 |
| 文件大小： | 276K |
| 代理商： | MMDF2N02ER2 |
MMDF2N02E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus
Gate–to–Source Voltage
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–to–Source Leakage Current
versus Voltage
0
0.25
0.75
1.5
2
0
1
3
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
4
2
TJ = 25°C
2.7 V
0.5
1.75
1.25
1
5
6
2.5 V
2.9 V
3.1 V
3.3 V
3.5 V
3.7 V
4.5 V
4.3 V
3.9 V
4.1 V
VGS = 10 V
7
0
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
VDS ≥ 10 V
TJ = 25°C
TJ = –55°C
25
°C
100
°C
2
4
6
5
1
2
2.5
3
3.5
4
3
7
1.5
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0.4
0.5
0.6
0.3
0.1
0.2
0
2
3
4
5
8
6
7
9
10
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
ID = 3.5 A
TJ = 25°C
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
ID, DRAIN CURRENT (AMPS)
0.15
0
1
2
5
6
0.05
0.1
3
4
10 V
VGS = 4.5
TJ = 25°C
7
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
– 50
0
50
100
150
0
0.5
1.0
1.5
2.0
VGS = 10 V
ID = 3.5 A
125
75
25
– 25
I DSS
,LEAKAGE
(nA)
1
100
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
10
5
10
15
20
VGS = 0 V
TJ = 125°C
100
°C
1000
10000
25
°C
25
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| MMDF2N02ER2G | 功能描述:MOSFET NFET SO8D 25V 3.6A 100mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| MMDF2N06V | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS MOSFET 3.3 AMPERES 60 VOLTS |
| MMDF2N06VL | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS MOSFET 2.5 AMPERES 60 VOLTS |
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