- 您现在的位置：买卖IC网 > PDF目录95977 > MMDF2P02ER2 (MOTOROLA INC) 2 A, 20 V, 0.4 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | MMDF2P02ER2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 20 V, 0.4 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 1/10页 |
| 文件大小： | 274K |
| 代理商： | MMDF2P02ER2 |
1
Motorola TMOS Power MOSFET Transistor Device Data
Designer's Data Sheet
Medium Power Surface Mount Products
TMOS Dual P-Channel
Field Effect Transistors
MiniMOS
devices are an advanced series of power MOSFETs
which utilize Motorola’s TMOS process. These miniature surface
mount MOSFETs feature ultra low RDS(on) and true logic level
performance. They are capable of withstanding high energy in the
avalanche and commutation modes and the drain–to–source diode
has a low reverse recovery time. MiniMOS devices are designed
for use in low voltage, high speed switching applications where
power efficiency is important. Typical applications are dc–dc
converters, and power management in portable and battery
powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor
controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, with Soft Recovery
IDSS Specified at Elevated Temperatures
Avalanche Energy Specified
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)(1)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
25
Vdc
Gate–to–Source Voltage — Continuous
VGS
± 20
Vdc
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 100°C
Drain Current — Single Pulse (tp ≤ 10 s)
ID
IDM
2.5
1.7
13
Adc
Apk
Total Power Dissipation @ TA = 25°C (2)
Derate above 25
°C
PD
2.0
16
W
mW/
°C
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 10 Vdc, Peak IL = 7.0 Apk, L = 10 mH, RG = 25 )
EAS
245
mJ
Thermal Resistance, Junction to Ambient (2)
R
θJA
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes, 0.0625
″ from case for 10 seconds
TL
260
°C
DEVICE MARKING
F2P02
(1) Negative sign for P–Channel device omitted for clarity.
(2) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max.
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMDF2P02ER2
13
″
12 mm embossed tape
2500
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s, E–FET and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDF2P02E/D
Motorola, Inc. 1996
D
S
G
MMDF2P02E
DUAL TMOS MOSFET
2.5 AMPERES
25 VOLTS
RDS(on) = 0.250 OHM
CASE 751–05, Style 11
SO–8
Source–1
1
2
3
4
8
7
6
5
Top View
Gate–1
Source–2
Gate–2
Drain–1
Drain–2
REV 5
相关PDF资料 |
PDF描述 |
|---|---|
| MMDF2P02HDR2 | 3300 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MMDF2P03HDR2 | 2 A, 30 V, 0.22 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| MMDF3207R2 | 7800 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MMDF3304R2 | 7300 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MMDF3304 | 7300 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDF2P02ER2G | 功能描述:MOSFET PFET 25V 2.5A 250MO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMDF2P02ER2G-ND | 制造商:ON Semiconductor 功能描述: |
| MMDF2P02HD | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 2 Amps, 20 Volts P−Channel SO−8, Dual |
| MMDF2P02HDR2 | 功能描述:MOSFET 20V 2A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMDF2P02HDR2G | 功能描述:MOSFET PFET SO8D 20V 3.3A 160mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。