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参数资料
| 型号： | MMDF2P02ER2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 20 V, 0.4 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 10/10页 |
| 文件大小： | 274K |
| 代理商： | MMDF2P02ER2 |
MMDF2P02E
9
Motorola TMOS Power MOSFET Transistor Device Data
PACKAGE DIMENSIONS
CASE 751–05
SO–8
ISSUE P
STYLE 11:
PIN 1.
SOURCE 1
2.
GATE 1
3.
SOURCE 2
4.
GATE 2
5.
DRAIN 2
6.
DRAIN 2
7.
DRAIN 1
8.
DRAIN 1
SEATING
PLANE
1
4
5
8
C
K
4X
P
A
0.25 (0.010) M T B S
S
0.25
(0.010)
M
B
M
8X
D
R
M
J
X
45
_
F
–A–
–B–
–T–
DIM
MIN
MAX
MILLIMETERS
A
4.80
5.00
B
3.80
4.00
C
1.35
1.75
D
0.35
0.49
F
0.40
1.25
G
1.27 BSC
J
0.18
0.25
K
0.10
0.25
M
0
7
P
5.80
6.20
R
0.25
0.50
_
G
NOTES:
1. DIMENSIONS A AND B ARE DATUMS AND T IS A
DATUM SURFACE.
2. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
3. DIMENSIONS ARE IN MILLIMETER.
4. DIMENSION A AND B DO NOT INCLUDE MOLD
PROTRUSION.
5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
6. DIMENSION D DOES NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE D DIMENSION AT MAXIMUM MATERIAL
CONDITION.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDF2P02ER2G | 功能描述:MOSFET PFET 25V 2.5A 250MO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMDF2P02ER2G-ND | 制造商:ON Semiconductor 功能描述: |
| MMDF2P02HD | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 2 Amps, 20 Volts P−Channel SO−8, Dual |
| MMDF2P02HDR2 | 功能描述:MOSFET 20V 2A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMDF2P02HDR2G | 功能描述:MOSFET PFET SO8D 20V 3.3A 160mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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