- 您现在的位置：买卖IC网 > PDF目录182955 > MMDJ3N03BJTR2G (ON SEMICONDUCTOR) 3 A, 30 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR PDF资料下载
参数资料
| 型号： | MMDJ3N03BJTR2G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 30 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR |
| 封装： | MINIATURE, PLASTIC, CASE 751-07, SOIC-8 |
| 文件页数： | 4/5页 |
| 文件大小： | 0K |
| 代理商： | MMDJ3N03BJTR2G |
MMDJ3N03BJT
http://onsemi.com
733
100 ms
Figure 7. VBE(on) Voltage
Figure 8. Capacitance
Figure 9. CurrentGain Bandwidth Product
Figure 10. Active Region Safe Operating Area
10
0.1
IC, COLLECTOR CURRENT (A)
1.2
0.4
VR, REVERSE VOLTAGE (V)
10
0.1
IC, COLLECTOR CURRENT (A)
100
10
V,
VOL
TAGE
(V)
f
0
1.0
,CURRENTGAIN
BANDWIDTH
PRODUCT
t
0.8
10
100
0.1
1000
10
C,
CAP
ACIT
ANCE
(pF)
0
1.0
100
0.1
VCE, COLLECTOREMITTER VOLTAGE (V)
10
0.01
0.001
I
1.0
,COLLECT
OR
CURRENT
(A)
C
VCE = 4.0 V
150
°C
25
°C
55
°C
Cob
VCE = 10 V
ftest = 1.0 MHz
TA = 25°C
10
1.0
0.1
BONDING WIRE LIMIT
THERMAL LIMIT (SINGLE PULSE)
SECONDARY BREAKDOWN LIMIT
5.0 ms
0.5 ms
Figure 11. Power Derating
T, TEMPERATURE (
°C)
15
25
2.0
1.0
0
P
50
,POWER
DISSIP
A
TION
(W)
D 0.5
1.5
75
100
125
TA
There are two limitations on the power handling ability of
a transistor: average junction temperature and secondary
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 10 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Secondary breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 12. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by secondary breakdown.
相关PDF资料 |
PDF描述 |
|---|---|
| MMDT2907A | 600 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMDT3904-13 | 200 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMDT4401 | 600 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMDT4413 | 600 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMDT5401-13 | 200 mA, 150 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDJ3P03BJT | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES |
| MMDJ-65608EV-30 | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM |
| MMDJ-65608EV-30-E | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM |
| MMDJ-65608EV-45 | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM |
| MMDJ-65608L-25 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SRAM |
发布紧急采购，3分钟左右您将得到回复。