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参数资料
| 型号： | MMDT5401-13 |
| 厂商： | DIODES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 150 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ULTRA SMALL, PLASTIC PACKAGE-6 |
| 文件页数： | 1/3页 |
| 文件大小： | 0K |
| 代理商： | MMDT5401-13 |
DS30169 Rev. 7 - 2
1 of 3
MMDT5401
www.diodes.com
Diodes Incorporated
Epitaxial Planar Die Construction
Complementary NPN Type Available
(MMDT 5551)
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Available in Lead Free/RoHS Compliant Version (Note 3)
Features
Maximum Ratings
@ TA = 25
°C unless otherwise specified
A
M
J
L
D
B C
H
K
G
F
C
1
B
2
E
2
E
1
B
1
C
2
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 6, on Page 2
Terminal Connections: See Diagram
Marking (See Page 2): K4M
Order & Date Code Information: See Page 2
Weight: 0.006 grams (approx.)
MMDT5401
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Maximum combined dissipation.
3. No purposefully added lead.
Characteristic
Symbol
MMDT5401
Unit
Collector-Base Voltage
VCBO
-160
V
Collector-Emitter Voltage
VCEO
-150
V
Emitter-Base Voltage
VEBO
-5.0
V
Collector Current - Continuous (Note 1)
IC
-200
mA
Power Dissipation (Note 1, 2)
Pd
200
mW
Thermal Resistance, Junction to Ambient (Note 1)
RqJA
625
K/W
Operating and Storage and Temperature Range
Tj,TSTG
-55 to +150
°C
SOT-363
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
a
0°
8°
All Dimensions in mm
SPICE MODEL: MMDT5401
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDT5401-7 | 功能描述:两极晶体管 - BJT -150V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT5401-7-F | 功能描述:两极晶体管 - BJT -150V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT5401-T | 功能描述:两极晶体管 - BJT -200mA -150V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT5401-TP | 功能描述:两极晶体管 - BJT -200mA -150V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT5451 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
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