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参数资料
| 型号： | MMDT2907AT/R13 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT PACKAGE-6 |
| 文件页数： | 2/5页 |
| 文件大小： | 100K |
| 代理商： | MMDT2907AT/R13 |
PAGE . 2
May 12.2010-REV.00
MMDT2907A
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Units
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C=-10mA,IB=0
-60
-
V
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C=-10μA,IE=0
-60
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E=-10μA,IC=0
-5.0
-
V
Base Cutoff Current
I
BL
V
CE=-30V,VEB=-0.5V
-
-50
nA
Collector Cutoff Current
I
CEX
V
CE=-30V,VEB=-0.5V
-
-50
nA
I
CBO
V
CE=-50V,IE=0
-
-10
nA
V
CE=-50V,IE=0
T
J=125
OC
-
-10
μA
DC Current Gain
h
FE
I
C=-0.1mA,VCE=-10V
I
C=-1.0mA,VCE=-10V
I
C=-10mA,VCE=-10V
I
C=-150mA,VCE=-10V
I
C=-500mA,VCE=-10V
75
100
50
-
300
-
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C=-150mA,IB=-15mA
I
C=-500mA,IB=-50mA
-
-0.4
-1.6
V
Base-Emitter Saturation Voltage
V
BE(SAT)
I
C=-150mA,IB=-15mA
I
C=-500mA,IB=-50mA
-
-1.3
-2.6
V
Collector-Base Capacitance
C
CBO
V
CB=-10V,IE=0,f=1MHz
-
8.0
pF
Emitter-Base Capacitance
C
EBO
V
CB=-2V,IC=0,f=1MHz
-
30
pF
Current Gain-Bandwidth Product
F
T
I
C=-50mA,VCE=-20V,
f=100MHz
200
-
MHz
Turn-On Time
t
on
V
CC=-30V,VBE=-0.5V,
I
C=-150mA,IB=-15mA
-
45
ns
Delay Time
t
d
V
CC=-30V,VBE=-0.5V,
I
C=-150mA,IB=-15mA
-
10
ns
Rise Time
t
r
V
CC=-30V,VBE=-0.5V,
I
C=-150mA,IB1=-15mA
-
40
ns
Turn-Off Time
t
off
V
CC=-6V,IC=-150mA,
I
B1=IB2=-15mA
-
100
ns
Storage Time
t
s
V
CC=-6V,IC=-150mA,
I
B1=IB2=-15mA
-
80
ns
Fall Time
t
f
V
CC=-6V,IC=-150mA,
I
B1=IB2=-15mA
-
30
ns
ELECTRICAL CHARACTERISTICS (T
J
=25
OC, unless otherwise noted)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDT2907V | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT2907V-7 | 功能描述:两极晶体管 - BJT PNP BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT2907V-7-F | 制造商:Diodes Incorporated 功能描述:TRANS GP BJT PNP 60V 0.6A 6PIN SOT-563 - Tape and Reel |
| MMDT3904 | 制造商:Lite-On Semiconductor Corporation 功能描述:NPN/NPN Multi-Chip Transistor |
| MMDT3904_06 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR |
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