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参数资料
| 型号： | MMDT3904T/R13 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-6 |
| 文件页数： | 1/4页 |
| 文件大小： | 157K |
| 代理商： | MMDT3904T/R13 |
PAGE . 1
STAD-MAY.04.2006
MMDT3904
DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE
40 Volts
200 mWatts
FEATURES
NPN epitaxial silicon, planar design
Collector-emitter voltage VCE = 40V
Collector current IC = 200mA
In compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
Case: SOT-363, Plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.006 gram
Marking: S1A
POWER
ABSOLUTE RATINGS
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Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm.
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Fig.54
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDT3904V | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT3904V_11 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:NPN Plastic-Encapsulate Transistors |
| MMDT3904V-7 | 功能描述:两极晶体管 - BJT 60V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT3904V-7-F | 功能描述:两极晶体管 - BJT 60V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT3904VC | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
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