参数资料
型号: MMDT2907AT/R7
元件分类: 小信号晶体管
英文描述: 600 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: ROHS COMPLIANT PACKAGE-6
文件页数: 4/5页
文件大小: 100K
代理商: MMDT2907AT/R7
PAGE . 4
May 12.2010-REV.00
MMDT2907A
0.01 0.02
0.05 0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
10
8.0
6.0
4.0
2.0
0
f, FREQUENCY (kHz)
NF
,
N
OISE
F
IGURE
(dB)
NF
,
N
OISE
F
IGURE
(dB)
50
100
200
500 1.0k 2.0k
5.0k 10k
20k
50k
10
8.0
6.0
4.0
2.0
0
R , SURGE RESISTANCE (OHMS)
S
-1.0 -2.0
-5.0
-10 -20
-50 -100 -200
-500 -1000
400
300
200
100
80
60
40
30
20
-0.1
-0.2 -0.3 -0.5
-1.0
-2.0-3.0 -5.0
-10
-20 -30
30
20
10
7.0
5.0
3.0
2.0
-0.1 -0.2
-0.5 -1.0 -2.0 -5.0 -10 -20
-50 -100-200
-500
-1.0
-0.8
-0.6
-0.4
-0.2
0
I , COLLECTOR CURRENT (mA)
C
-0.1 -0.2 -0.5 -1.0 -2.0
-5.0 -10 -20 -50 -100 -200 -500
+0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
I , COLLECTOR CURRENT (mA)
C
I =-1.0mA,R =430
-500 A,R =560
-50 A,R =2.7k
-100 A,R =1.6
CS
S
W
mW
S
k
I =-50 A
-100 A
-500 A
-1.0mA
C
m
R =OPTIMUM SOURCE RESISTANCE
S
f=1.0kHz
C
eb
C
cb
V =-20V
T=25 C
CE
J
O
T=25 C
J
O
V@I /I =10
BE(sat)
C
B
V
@V =-10V
BE(on)
CE
V@
CE(sat)
I/I =10
CB
Rfor V
QVC
CE(sat)
Rfor V
QVB
BE
REVERSE VOLTAGE (VOLTS)
I , COLLECTOR CURRENT (mA)
C
C,
CAP
A
CIT
A
NCE
(pF)
f
,
CURRENT
-GAIN-BANDWIDTH
PRODUCT
(MHz)
T
COEFFICIENT
(mV/
C)
O
V
,
VOL
T
AGE
(VOL
T
S)
Fig.5-Frequency Effects
Fig.6-Source Resistance Effects
Fig.8-Current-Gain-Bandwidth Product
Fig.7-Capacitances
Fig.9-On Voltage
Fig.10-Temperature Coefficients
相关PDF资料
PDF描述
MMDT3904S-7 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MMDT3904T/R13 200 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
MMDT3904TB6 200 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
MMDT3904TB6T/R7 200 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
MMDT3904V-7-L 200 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
MMDT2907V 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT2907V-7 功能描述:两极晶体管 - BJT PNP BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MMDT2907V-7-F 制造商:Diodes Incorporated 功能描述:TRANS GP BJT PNP 60V 0.6A 6PIN SOT-563 - Tape and Reel
MMDT3904 制造商:Lite-On Semiconductor Corporation 功能描述:NPN/NPN Multi-Chip Transistor
MMDT3904_06 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR