参数资料
型号: MMDT3906T/R7
元件分类: 小信号晶体管
英文描述: 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: ROHS COMPLIANT, PLASTIC PACKAGE-6
文件页数: 2/4页
文件大小: 147K
代理商: MMDT3906T/R7
PAGE . 2
STAD-MAY.06.2006
MMDT3906
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ELECTRICAL CHARACTERISTICS
Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
27 5
W
10K
W
0
-0 .5 V
300 ns
-10.9V
+3 V
D elay and R ise Tim e Equiva lent Test C ircuit
<1ns
C * < 4pF
S
S torag e and F all Tim e E q uivalent Test C ircu it
0
+9 .1 V
10 to 500 us
Duty Cycle ~ 2.0%
- 1 0.9V
< 1ns
0
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+3V
27 5
W
10K
W
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S
SWITCHING TIME EQUIVALENT TEST CIRCUITS
相关PDF资料
PDF描述
MMDT3906 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
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相关代理商/技术参数
参数描述
MMDT3906V 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT3906V_11 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:PNP Plastic-Encapsulate Transistors
MMDT3906V-7 功能描述:两极晶体管 - BJT PNP BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MMDT3906V-7-F 制造商:Diodes Incorporated 功能描述:TRANS GP BJT PNP 40V 0.2A 6PIN SOT-563 - Tape and Reel
MMDT3906V-7-L 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR