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参数资料
| 型号： | MMDT3906V |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ULTRA SMALL, PLASTIC PACKAGE-6 |
| 文件页数： | 1/4页 |
| 文件大小： | 742K |
| 代理商： | MMDT3906V |
MMDT3906V
PNP
Plastic-Encapsulate
Transistors
Features
Epitaxial Die Construction
Ideal for Low Power Amplification and Switching
Ultra-small Surface Mount Package
Maximum Ratings @ 25
OC Unless Otherwise Specified
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
-40
V
VCBO
Collector-Base Voltage
-40
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-0.2
A
PC
Collector Dissipation
0.15
W
RθJA
Thermal Resistance Junction to Ambient
833
℃/W
TJ
Operating Junction Temperature
-55 to +150
℃
TSTG
Storage Temperature
-55 to +150
℃
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=-1mAdc, IB=0)
-40
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=-10uAdc, IE=0)
-40
---
Vdc
V(BR)EBO
Collector-Emitter Breakdown Voltage
(IE=-10uAdc, IC=0)
-5
---
Vdc
ICEX
Collector Cutoff Current
(VCE=-30Vdc,VEB(OFF)=-3Vdc)
---
50
nAdc
IBL
Base Cutoff Current
(VCE=-30Vdc,VEB(OFF)=-3Vdc)
---
50
nAdc
hFE
DC Current Gain
(IC=-0.1mAdc, VCE=-1Vdc)
(IC=-1mAdc, VCE=-1Vdc)
(IC=-10mAdc, VCE=-1Vdc)
(IC=-50mAdc, VCE=-1Vdc)
(IC=-100mAdc, VCE=-1Vdc)
60
80
100
60
30
---
300
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-10mAdc, IB=-1mAdc)
(IC=-50mAdc, IB=-5mAdc)
---
-0.25
-0.4
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=-10mAdc, IB=-1mAdc)
(IC=-50mAdc, IB=-5mAdc)
-0.65
---
-0.85
-0.95
Vdc
omponents
20736 Marilla
Street Chatsworth
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MCC
Revision: 2
2006/05/19
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.006
.011
0.15
0.30
B
.043
.049
1.10
1.25
C
.061
.067
1.55
1.70
D
.020
0.50
G
.035
.043
0.90
1.10
H
.059
.067
1.50
1.70
K
.022
.023
0.56
0.60
L
.004
.011
0.10
0.30
M
.004
.007
0.10
0.18
SOT-563
TM
Micro Commercial Components
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Marking:KAR
www.mccsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDT3906V_11 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:PNP Plastic-Encapsulate Transistors |
| MMDT3906V-7 | 功能描述:两极晶体管 - BJT PNP BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT3906V-7-F | 制造商:Diodes Incorporated 功能描述:TRANS GP BJT PNP 40V 0.2A 6PIN SOT-563 - Tape and Reel |
| MMDT3906V-7-L | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT3906VC | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
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