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参数资料
| 型号： | MMDT3946-TP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ULTRA SMALL, PLASTIC PACKAGE-6 |
| 文件页数： | 2/6页 |
| 文件大小： | 334K |
| 代理商： | MMDT3946-TP |
NPN 3904 Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=1mAdc, IB=0)
40
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=10uAdc, IE=0)
60
---
Vdc
V(BR)EBO
Collector-Emitter Breakdown Voltage
(IE=10uAdc, IC=0)
5
---
Vdc
ICBO
Collector Cutoff Current
(VCB=30Vdc,IE=0)
---
50
nAdc
ICEO
Collector Cutoff Current
(VCE=30Vdc,IB=0)
---
500
nAdc
IEBO
Emitter Cutoff Current
(VEB=5Vdc,IC=0)
---
50
nAdc
hFE
DC Current Gain
(IC=0.1mAdc, VCE=1Vdc)
(IC=1mAdc, VCE=1Vdc)
(IC=10mAdc, VCE=1Vdc)
(IC=50mAdc, VCE=1Vdc)
(IC=100mAdc, VCE=1Vdc)
40
70
100
60
30
---
300
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=10mAdc, IB=1mAdc)
(IC=50mAdc, IB=5mAdc)
---
0.2
0.3
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=10mAdc, IB=1mAdc)
(IC=50mAdc, IB=5mAdc)
0.65
---
0.85
0.95
Vdc
fT
Current Gain-Bandwidth Product
(VCE=20Vdc, IC=20mAdc, f=100MHz)
300
---
MHz
Cob
Output Capacitance
(VCB=5Vdc, f=1.0MHz, IE=0)
---
4
pF
NF
Noise Figure
(VCE=5V,IC=0.1mA, f=1KHz, RS=1k
)
---
5
dB
td
Delay Time
---
35
ns
tr
Rise Time
VCC=3V, IC=10mA, VBE=0.5V,
IB1=1mA
---
35
ns
tS
Storage Time
---
200
ns
tf
Fall Time
VCC=3V, IC=10mA, IB1=IB2=1mA
---
50
ns
Revision:
A
20
11/01/01
MCC
MMDT3946
TM
Micro Commercial Components
www.mccsemi.com
2 of 6
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDT4124 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT4124_09 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT4124-7 | 功能描述:两极晶体管 - BJT 25V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT4124-7-F | 功能描述:两极晶体管 - BJT 25V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT4126 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
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