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参数资料
| 型号： | MMDT4403TB6T/R7 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-6 |
| 文件页数： | 1/3页 |
| 文件大小： | 117K |
| 代理商： | MMDT4403TB6T/R7 |
PAGE . 1
REV.0.1-JUN.29.2009
MMDT4403TB6
DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE
40 Volts
200 mWatts
FEATURES
PNP epitaxial silicon, planar design
Collector-emitter voltage V
CE = -40V
Collector current I
C = -500mA
In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: SOT-563, Plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.003 gram
Marking: TZ
POWER
ABSOLUTE RATINGS
THERMAL CHARACTERISTICS
Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm.
1
2
3
6
5
4
Fig.53
SOT-563
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Parameter
Symbol
Value
Units
Max Power Dissipation (Note 1)
PTOT
200
mW
Thermal Resistance , Junction to Ambient
RJA
625
O
C/W
Junction Temperature
TJ
-55 to 150
O
C
Storage Temperature
TSTG
-55 to 150
O
C
Parameter
Symbol
Value
Units
Collector - Emitter Voltage
VCEO
-40
V
Collector - Base Voltage
VCBO
-40
V
Emitter - Base Voltage
VEBO
-5.0
V
Collector Current - Continuous
I C
-500
mA
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PDF描述 |
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| MMDT4403TB6 | 500 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMDT4403 | 600 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDT4403-TP | 功能描述:两极晶体管 - BJT -600mA -40V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT4413 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT4413_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT4413_2 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT4413-7 | 功能描述:两极晶体管 - BJT 40 / 40V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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