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参数资料
| 型号： | MMDT5401 |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 150 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ULTRA SMALL, PLASTIC PACKAGE-6 |
| 文件页数： | 1/2页 |
| 文件大小： | 528K |
| 代理商： | MMDT5401 |
MMDT5401
Plastic-Encapsulate
Transistors
Features
Ideal for Low Power Amplification and Switching
Ultra-small Surface Mount Package
Epitaxial Planar Die Construction
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
-150
V
VCBO
Collector-Base Voltage
-160
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-0.2
A
PC
Collector Dissipation
0.2
W
TJ
Operating Junction Temperature
-55 to +150
℃
TSTG
Storage Temperature
-55 to +150
℃
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=-1mAdc, IB=0)
-150
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=-100uAdc, IE=0)
-160
---
Vdc
V(BR)EBO
Collector-Emitter Breakdown Voltage
(IE=-10uAdc, IC=0)
-5
---
Vdc
ICBO
Collector Cutoff Current
(VCB=-120Vdc,IE=0)
--
0.05
uA
IEBO
Emitter Cutoff Current
(VEB=-3Vdc,IC=0)
---
-0.05
uA
hFE
DC Current Gain
(IC=-1mAdc, VCE=-5Vdc)
(IC=-10mAdc, VCE=-5Vdc)
(IC=-50mAdc, VCE=-5Vdc)
50
60
50
---
240
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-10mAdc, IB=-1mAdc)
(IC=-50mAdc, IB=-5mAdc)
---
-0.2
-0.5
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=-10mAdc, IB=-1mAdc)
(IC=-50mAdc, IB=-5mAdc)
---
-1
Vdc
fT
Current Gain-Bandwidth Product
(VCE=-10Vdc, IC=-10mAdc, f=100MHz)
100
300
MHz
Cob
Output Capacitance
(VCB=-5Vdc, f=1.0MHz, IE=0)
---
4.5
pF
NF
Noise Figure
(VCE=-10V,IC=-0.1mA, f=1KHz, RS=1k
Ω)
---
6
dB
td
Delay Time
---
35
ns
tr
Rise Time
VCC=-3V,IC=-10mA,
VBE=-0.5V, IB1=-IB2=-1mA
---
35
ns
tS
Storage Time
---
225
ns
tf
Fall Time
VCC=-3V, IC=-10mA,
IB1=-IB2=-1mA
---
75
ns
SOT-363
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.004
.012
0.10
0.30
B
.045
.053
1.15
1.35
C
.079
.087
2.00
2.20
D
.026
0.65Nominal
F
.012
.016
0.30
0.40
H
.071
.087
1.80
2.20
J
---
.004
---
0.10
K
.035
.039
0.90
1.00
L
.010
.016
0.25
0.40
M
.004
.016
0.10
0.25
J
M
A
C
B
G
H
K
D
F
L
DIMENSIONS
www.mccsemi.com
Revision: 1
2005/08/29
omponents
20736 Marilla
Street Chatsworth
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MCC
TM
Micro Commercial Components
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDT5401_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT5401_11 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:Plastic-Encapsulate Transistors |
| MMDT5401_2 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT5401-7 | 功能描述:两极晶体管 - BJT -150V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT5401-7-F | 功能描述:两极晶体管 - BJT -150V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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