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| 型号： | MMFT2N25EG |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封装： | CASE 318E-04, 4 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 166K |
| 代理商： | MMFT2N25EG |
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 1
1
Publication Order Number:
MMFT2N25E/D
MMFT2N25E
Product Preview
TMOS EFET
NChannel EnhancementMode Silicon
Gate
This advanced high voltage TMOS EFET is designed to withstand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a draintosource diode with fast
recovery time. Designed for high voltage, high speed switching
applications such as power supplies, PWM motor controls and other
inductive loads, the avalanche energy capability is specified to
eliminate the guesswork in designs where inductive loads are switched
and offer additional safety margin against unexpected voltage
transients.
Avalanche Energy Capability Specified at Elevated Temperature
Internal SourcetoDrain Diode Designed to Replace External Zener
Transient Suppressor Absorbs High Energy in the Avalanche Mode
SourcetoDrain Diode Recovery Time Comparable to Discrete Fast
Recovery Diode
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
250
Vdc
DraintoGate Voltage, RGS = 1.0 mW
VDGR
250
Vdc
GatetoSource Voltage — Continuous
VGS
± 20
Vdc
GatetoSource Voltage — Single Pulse (tp ≤ 50 mS)
VGSM
± 40
Vdc
Drain Current — Continuous @ TC = 25°C
Drain Current — Continuous @ TC = 100°C
Drain Current — Single Pulse (tp ≤ 10 mS)
ID
IDM
2.0
0.6
7.0
Adc
Apk
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Total PD @ TA = 25°C mounted on 1″ Sq. Drain Pad on FR4 Bd. Material
Total PD @ TA = 25°C mounted on 0.7″ Sq. Drain Pad on FR4 Bd. Material
Total PD @ TA = 25°C mounted on min. Drain Pad on FR4 Bd. Material
PD
0.77
6.2
1.0
1.2
0.8
Watts
mW/°C
Watts
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C
UNCLAMPED DRAINTOSOURCE AVALANCHE CHARACTERISTICS (TJ < 150°C)
Single Pulse DraintoSource Avalanche Energy — Starting TJ = 25°C
(VDD = 80 V, VGS = 10 V, Peak IL= 4.0 Apk, L = 3.0 mH, RG = 25 Ω)
EAS
26
mJ
THERMAL CHARACTERISTICS
— JunctiontoAmbient on 1″ Sq. Drain Pad on FR4 Bd. Material
— JunctiontoAmbient on 0.7″ Sq. Drain Pad on FR4 Bd. Material
— JunctiontoAmbient on min. Drain Pad on FR4 Bd. Material
RθJA
90
103
162
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
TL
260
°C
This document contains information on a product under development. Motorola reserves
the right to change or discontinue this product without notice.
TMOS is a registered trademark of Motorola, Inc.
EFET is a trademark of Motorola, Inc.
http://onsemi.com
TMOS POWER FET
2.0 AMPERES, 250 VOLTS
RDS(on) = 3.5 W
CASE 318E04, STYLE 3
TO261AA
1
2
3
4
D
S
G
2,4
3
1
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相关代理商/技术参数 |
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|---|---|
| MMFT2N25ET3 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
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| MMFT3055ET1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 1.7A 4-Pin(3+Tab) SOT-223 T/R 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
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