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参数资料
| 型号： | MMFT3055ET1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封装： | CASE 318E-04, 4 PIN |
| 文件页数： | 1/7页 |
| 文件大小： | 191K |
| 代理商： | MMFT3055ET1 |
Publication Order Number:
MMFT3055E/D
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 5
1
MMFT3055E
Power MOSFET
1.7 Amp, 60 Volts
NChannel TMOS EFETt SOT223
This advanced EFET is a TMOS Medium Power MOSFET
designed to withstand high energy in the avalanche and commutation
modes. This new energy efficient device also offers a draintosource
diode with a fast recovery time. Designed for low voltage, high speed
switching applications in power supplies, dcdc converters and PWM
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients. The device is housed in the SOT223 package which is
designed for medium power surface mount applications.
Features
Silicon Gate for Fast Switching Speeds
Low RDS(on) — 0.15 Ω max
The SOT223 Package can be Soldered Using Wave or Reflow. The
Formed Leads Absorb Thermal Stress During Soldering, Eliminating
the Possibility of Damage to the Die
Available in 12 mm Tape and Reel
Use MMFT3055ET1 to order the 7 inch/1000 unit reel.
Use MMFT3055ET3 to order the 13 inch/4000 unit reel.
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
60
Vdc
GatetoSource Voltage Continuous
VGS
± 20
Vdc
Drain Current Continuous
Drain Current Single Pulse (tp ≤ 10 ms)
ID
IDM
1.7
6.8
Adc
Apk
Total Power Dissipation @ TA = 25°C
Derate above 25°C (Note 1)
PD
0.8
6.3
Watts
mW/°C
Operating and Storage Temperature
Range
TJ, Tstg
65 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 60 Vdc, VGS = 10 Vdc, Peak
IL = 1.7 Apk, L = 0.2 mH, RG = 25 Ω )
EAS
168
mJ
Thermal Resistance
Junction to Ambient (surface mounted)
RθJA
156
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10
seconds
TL
260
°C
1. Power rating when mounted on FR4 glass epoxy printed circuit board
using recommended footprint.
1
2
3
4
NChannel
Device
Package
Shipping
ORDERING INFORMATION
MMFT3055ET1
SOT223
1000 Tape & Reel
SOT223
CASE 318E
STYLE 3
LWW
MARKING
DIAGRAM
3055
L
= Location Code
WW
= Work Week
PIN ASSIGNMENT
3
2
1
4
Gate
Drain
Source
Drain
MMFT3055ET3
SOT223
4000 Tape & Reel
D
S
G
2,4
3
1
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
VDSS
RDS(ON) TYP
ID MAX
60 V
150 mΩ
1.7 A
相关PDF资料 |
PDF描述 |
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| MMFT3055ET3 | 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MMFT3055ET1 | 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MMFT3055ELT3 | 1500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| MMFT3055VLT1G | 1500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| MMFT3055VLT3G | 1500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMFT3055V | 制造商:ON Semiconductor 功能描述:MOSFET N LOGIC SOT-223 |
| MMFT3055VL | 制造商:ON Semiconductor 功能描述:MOSFET N SOT-223 |
| MMFT3055VT1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 1.7A 4-Pin(3+Tab) SOT-223 T/R |
| MMFT3055VT3 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 1.7A 4-Pin(3+Tab) SOT-223 T/R |
| MMFT5P03HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS MEDIUM POWER FET 5.2 AMPERES 30 VOLTS |
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