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参数资料
| 型号： | MMFT3055ET1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封装： | CASE 318E-04, 4 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 191K |
| 代理商： | MMFT3055ET1 |
MMFT3055E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage, (VGS = 0, ID = 250 mA)
V(BR)DSS
60
Vdc
Zero Gate Voltage Drain Current, (VDS = 60 V, VGS = 0 V)
IDSS
10
mAdc
GateBody Leakage Current, (VGS = 20 V, VDS = 0 V)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage, (VDS = VGS, ID = 1.0 mA)
VGS(th)
2.0
4.5
Vdc
Static DraintoSource OnResistance, (VGS = 10 V, ID = 0.85 A)
RDS(on)
0.15
W
DraintoSource OnVoltage, (VGS = 10 V, ID = 1.7 A)
VDS(on)
0.34
Vdc
Forward Transconductance, (VDS = 15 V, ID = 0.85 A)
gFS
2.2
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 20 V,
VGS = 0 V, f = 1.0 MHz)
Ciss
430
pF
Output Capacitance
Coss
225
Reverse Transfer Capacitance
Crss
40
SWITCHING CHARACTERISTICS
TurnOn Delay Time
(VDD = 25 V, ID = 0.85 A
VGS = 10 V, RG = 50 W,
RGS = 25 W)
td(on)
15
ns
Rise Time
tr
22
TurnOff Delay Time
td(off)
31
Fall Time
tf
49
Total Gate Charge
(VDS = 48 V, ID = 1.7 A,
VGS = 10 Vdc)
See Figures 15 and 16
Qg
12.5
nC
GateSource Charge
Qgs
2.0
GateDrain Charge
Qgd
4.5
SOURCE DRAIN DIODE CHARACTERISTICS(1)
Forward OnVoltage
IS = 1.7 A, VGS = 0 V
VSD
0.8
Vdc
Forward TurnOn Time
IS = 1.7 A, VGS = 0 V,
dlS/dt = 400 A/ms,
VR = 30 V
ton
Limited by stray inductance
Reverse Recovery Time
trr
50
ns
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
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