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参数资料
| 型号： | MMPQ2222 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 30 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SOIC-16 |
| 文件页数： | 1/2页 |
| 文件大小： | 46K |
| 代理商： | MMPQ2222 |
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978)-794-1666 / (978) Fax: (978) 689-0803
Page 1 of 2
MAXIMUM RATINGS
Ratings
Symbol
MMPQ2222
MMPQ2222A
Unit
Collector-Emitter Voltage
VCEO
30
40
Vdc
Collector-Base Voltage
VCB
60
75
Vdc
Emitter-Base Voltage
VEB
5.0
Vdc
Collector Current -- Continuous
IC
500
mAdc
Each
Transistor
Four Transistors
Equal Power
Total Power Dissipation
@ TA = 25
0C
Derate above 25
0C
PD
0.52
4.2
1.0
8.0
W
mW/
0C
Total Power Dissipation
@ TC = 25
0C
Derate above 25
0C
PD
0.8
6.4
2.4
19.2
W
mW/
0C
Operating & Storage Junction Temp. Range
TJ, Tstg
-55 to +150
0C
ELECTRICAL CHARACTERISTICS (TA = 25
0C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(1)
IC = 10 mAdc, IB = 0
MMPQ2222
MMPQ2222A
V(BR)CEO
30
40
-
Vdc
Collector-Base Breakdown Voltage
IC = 10 Adc, IE = 0
MMPQ2222
MMPQ2222A
V(BR)CBO
60
75
-
Vdc
Emitter-Base Breakdown Voltage
IB = 10 Adc, IC = 0
V(BR)EBO
5.0
-
Vdc
Collector Cutoff Current
VCB = 50 Vdc, IE = 0
MMPQ2222
VCB = 60 Vdc, IE = 0
MMPQ2222A
ICBO
-
50
10
ηAdc
Emitter Cutoff Current
VBE = 3.0 Vdc, IC = 0
MMPQ2222
MMPQ2222A
IEBO
-
50
10
ηAdc
ON CHARACTERISTICS
DC Current Gain
(1)
IC = 100 Adc, VCE = 10 Vdc
MMPQ2222A
IC = 1.0 mAdc, VCE = 10 Vdc
MMPQ2222A
IC = 10 mAdc, VCE = 10 Vdc
MMPQ2222, MMPQ2222A
IC = 150 mAdc, VCE = 10 Vdc
MMPQ2222, MMPQ2222A
IC = 300 mAdc, VCE = 10 Vdc
MMPQ2222
IC = 500 mAdc, VCE = 10 Vdc
MMPQ2222A
IC = 150 mAdc, VCE = 1.0 Vdc
MMPQ2222A
hFE
35
50
75
100
30
40
50
-
300
-
SOIC
16 PIN QUAD
NPN GENERAL PURPOSE QUAD TRANSISTOR
TECHNICAL DATA
500 mAMPERE
30-40 VOLTS
0.52-8.0 WATTS
MMPQ2222
MMPQ2222A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMPQ2222 | 制造商:Fairchild Semiconductor Corporation 功能描述:BIPOLAR TRANSISTOR |
| MMPQ2222_Q | 功能描述:两极晶体管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMPQ2222A | 功能描述:两极晶体管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMPQ2222A | 制造商:Fairchild Semiconductor Corporation 功能描述:BIPOLAR TRANSISTOR NPN 40V SOIC |
| MMPQ2222A_Q | 功能描述:两极晶体管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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