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参数资料
| 型号： | MMPQ2222L86Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SOIC-16 |
| 文件页数： | 1/6页 |
| 文件大小： | 113K |
| 代理商： | MMPQ2222L86Z |
PN2222A
/
MMBT2222A
/
MMPQ2222
/
NMT2222
/
PZT2222A
NPN General Purpose Amplifier
This device is for use as a medium power amplifier and switch
requiring collector currents up to 500 mA. Sourced from Pro-
cess 19.
PN2222A
C
B
E
TO-92
PZT2222A
B
C
SOT-223
E
MMBT2222A
C
B
E
SOT-23
Mark: 1P
NMT2222
MMPQ2222
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
75
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector Current - Continuous
1.0
A
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
SOT-6
Mark: .1B
C1
E1
C2
B1
E2
B2
1997 Fairchild Semiconductor Corporation
SOIC-16
C1
C2
C3
C4
E1
B1
E2
B2
E3
B3
E4
B4
pin #1
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相关代理商/技术参数 |
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| MMPQ2907 | 功能描述:两极晶体管 - BJT PNP Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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