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参数资料
| 型号： | MMPQ2222R1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 30 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, SO-16 |
| 文件页数： | 12/22页 |
| 文件大小： | 295K |
| 代理商： | MMPQ2222R1 |
MMPQ2222 MMPQ2222A
2–429
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain(1)
(IC = 100 mA, VCE = 10 V)
MMPQ2222A
(IC = 1.0 mA, VCE = 10 V)
MMPQ2222A
(IC = 10 mA, VCE = 10 V)
MMPQ2222
MMPQ2222A
(IC = 150 mA, VCE = 10 V)
MMPQ2222
MMPQ2222A
(IC = 300 mA, VCE = 10 V)
MMPQ2222
(IC = 500 mA, VCE = 10 V)
MMPQ2222A
(IC = 150 mA, VCE = 1.0 V)
MMPQ2222A
hFE
35
50
75
100
30
40
50
—
300
—
Collector – Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
MMPQ2222
MMPQ2222A
(IC = 300 mAdc, IB = 30 mAdc)
MMPQ2222
(IC = 500 mAdc, IB = 50 mAdc)
MMPQ2222A
VCE(sat)
—
0.4
0.3
1.6
1.0
Vdc
Base – Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
MMPQ2222
MMPQ2222A
(IC = 300 mAdc, IB = 30 mAdc)
MMPQ2222
(IC = 500 mAdc, IB = 50 mAdc)
MMPQ2222A
VBE(sat)
—
1.3
1.2
2.6
2.0
Vdc
DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product(1)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
200
350
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
4.5
—
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
—
17
—
pF
SWITCHING CHARACTERISTICS
Turn–On Time
(VCC = 30 Vdc, VBE(off) = –0.5 Vdc, IC = 150 mAdc,
IB1 = 15 mAdc)
ton
—
25
—
ns
Turn–Off Time
(VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc)
toff
—
250
—
ns
1. Pulse Test: Pulse Width
v 300 ms; Duty Cycle v 2.0%.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMPQ2369 | 功能描述:两极晶体管 - BJT 500mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMPQ2369 WAF | 制造商:ON Semiconductor 功能描述: |
| MMPQ2369R WAF | 制造商:ON Semiconductor 功能描述: |
| MMPQ2369R2 | 功能描述:两极晶体管 - BJT 500mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMPQ2907 | 功能描述:两极晶体管 - BJT PNP Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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