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参数资料
| 型号： | MMPQ2907R1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, SO-16 |
| 文件页数： | 1/22页 |
| 文件大小： | 296K |
| 代理商： | MMPQ2907R1 |
2–432
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Quad General Purpose
Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
MMPQ2907
MMPQ2907A
Unit
Collector – Emitter Voltage
VCEO
–40
–60
Vdc
Collector – Base Voltage
VCB
–60
Vdc
Emitter – Base Voltage
VEB
–5.0
Vdc
Collector Current — Continuous
IC
–600
mAdc
Each
Transistor
Four
Transistors
Equal Power
Total Power Dissipation @ TA = 25°C
Derate above 25
°C
PD
0.52
4.2
1.0
8.0
Watts
mW/
°C
Total Power Dissipation @ TC = 25°C
Derate above 25
°C
PD
0.8
6.4
2.4
19.2
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
MMPQ2907
(IC = –10 mAdc, IB = 0)
MMPQ2907A
V(BR)CEO
–40
–60
—
Vdc
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
V(BR)CBO
–60
—
Vdc
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
V(BR)EBO
–5.0
—
Vdc
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
MMPQ2907
(VCB = –50 Vdc, IE = 0)
MMPQ2907A
ICBO
—
–50
–10
nAdc
Emitter Cutoff Current
(VEB = –3.0 Vdc, IC = 0)
IEBO
—
–50
nAdc
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle = 2.0%.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMPQ2907
MMPQ2907A
CASE 751B–05, STYLE 4
SO–16
1
16
1
2
3
4
5
6
7
8
10
11
12
13
14
15
16
9
REV 1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMPQ3467 | 功能描述:两极晶体管 - BJT 1A 40V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMPQ3725 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:NPN Switching Transistor |
| MMPQ3725 WAF | 制造商:ON Semiconductor 功能描述: |
| MMPQ3904 | 功能描述:两极晶体管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMPQ3904_Q | 功能描述:两极晶体管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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