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参数资料
| 型号： | MMPQ2907R1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, SO-16 |
| 文件页数： | 12/22页 |
| 文件大小： | 296K |
| 代理商： | MMPQ2907R1 |
MMPQ2907 MMPQ2907A
2–433
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain(1)
(IC = –100 Adc, VCE = –10 Vdc)
MMPQ2907A
(IC = –1.0 mAdc, VCE = –10 Vdc)
MMPQ2907A
(IC = –10 mAdc, VCE = –10 Vdc)
MMPQ2907/2907A
(IC = –150 mAdc, VCE = –10 Vdc)
MMPQ2907/2907A
(IC = –300 mAdc, VCE = –10 Vdc)
MMPQ2907/2907A
(IC = –500 mAdc, VCE = –10 Vdc)
MMPQ2907/2907A
hFE
75
100
75/100
100
30/50
50
—
300
—
Collector – Emitter Saturation Voltage(1)
(IC = –150 mAdc, IB = –15 mAdc)
MMPQ2907
(IC = –300 mAdc, IB = –30 mAdc)
MMPQ2907
(IC = –500 mAdc, IB = –50 mAdc)
MMPQ2907
VCE(sat)
—
–0.4
–1.6
Vdc
Base – Emitter Saturation Voltage(1)
(IC = –150 mAdc, IB = –15 mAdc)
MMPQ2907
(IC = –300 mAdc, IB = –30 mAdc)
MMPQ2907
(IC = –500 mAdc, IB = –50 mAdc)
MMPQ2907A
VBE(sat)
—
–1.3
–2.6
Vdc
DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product(1)
(IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz)
fT
200
350
—
MHz
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
6.0
—
pF
Input Capacitance
(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz)
Cib
—
20
—
pF
SWITCHING CHARACTERISTICS
Turn–On Time
(VCC = –30 Vdc, IC = –150 mAdc, IB1 = –15 mAdc)
ton
—
30
—
ns
Turn–Off Time
(VCC = –6.0 Vdc, IC = –150 mAdc, IB1 = IB2 = –15 mAdc)
toff
—
100
—
ns
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle = 2.0%.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMPQ3467 | 功能描述:两极晶体管 - BJT 1A 40V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMPQ3725 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:NPN Switching Transistor |
| MMPQ3725 WAF | 制造商:ON Semiconductor 功能描述: |
| MMPQ3904 | 功能描述:两极晶体管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMPQ3904_Q | 功能描述:两极晶体管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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