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参数资料
| 型号： | MMSF3P02HDR2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 5.6 A, 20 V, 0.095 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 6/10页 |
| 文件大小： | 302K |
| 代理商： | MMSF3P02HDR2 |
MMSF3P02HD
5
Motorola TMOS Power MOSFET Transistor Device Data
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
RG, GATE RESISTANCE (OHMS)
1
10
100
1000
100
10
t,
TIME
(ns)
VDD = 10 V
ID = 3 A
VGS = 10 V
TJ = 25°C
tr
tf
td(off)
td(on)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
24
V
GS
,GA
TE–T
O–SOURCE
VOL
TAGE
(VOL
TS)
20
16
12
8
4
0
10
6
2
0
QT, TOTAL CHARGE (nC)
V
DS
,DRAIN–T
O–SOURCE
VOL
TAGE
(VOL
TS)
12
8
4
8
36
ID = 3 A
TJ = 25°C
12
VDS
VGS
QT
Q2
Q3
Q1
16
20
24
28
32
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse re-
covery characteristics which play a major role in determining
switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier de-
vice, therefore it has a finite reverse recovery time, trr, due to
the storage of minority carrier charge, QRR, as shown in the
typical reverse recovery wave form of Figure 15. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery further
increases switching losses. Therefore, one would like a
diode with short trr and low QRR specifications to minimize
these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current ring-
ing. The mechanisms at work are finite irremovable circuit
parasitic inductances and capacitances acted upon by high
di/dts. The diode’s negative di/dt during ta is directly con-
trolled by the device clearing the stored charge. However,
the positive di/dt during tb is an uncontrollable diode charac-
teristic and is usually the culprit that induces current ringing.
Therefore, when comparing diodes, the ratio of tb/ta serves
as a good indicator of recovery abruptness and thus gives a
comparative estimate of probable noise generated. A ratio of
1 is considered ideal and values less than 0.5 are considered
snappy.
Compared to Motorola standard cell density low voltage
MOSFETs, high cell density MOSFET diodes are faster
(shorter trr), have less stored charge and a softer reverse re-
covery characteristic. The softness advantage of the high
cell density diode means they can be forced through reverse
recovery at a higher di/dt than a standard cell MOSFET
diode without increasing the current ringing or the noise gen-
erated. In addition, power dissipation incurred from switching
the diode will be less due to the shorter recovery time and
lower switching losses.
0.3
0.4
0.5
0.6
0.7
1.4
0
1
2
2.5
3
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
I S
,SOURCE
CURRENT
(AMPS)
VGS = 0 V
TJ = 25°C
1.5
0.8
0.9
0.5
1
1.1
1.2
1.3
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| MMSF3P02HDR2G | 功能描述:MOSFET PFET SO8S 20V 5.6A 75mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMSF3P02HDR2SG | 功能描述:MOSFET P-CH 20V 5.6A 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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