- 您现在的位置：买卖IC网 > PDF目录378673 > MMSF4P01HD (MOTOROLA INC) SINGLE TMOS POWER FET 4.0 AMPERES 12 VOLTS PDF资料下载
参数资料
| 型号： | MMSF4P01HD |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | SINGLE TMOS POWER FET 4.0 AMPERES 12 VOLTS |
| 中文描述： | 4 A, 12 V, 0.09 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 751-05, SOIC-8 |
| 文件页数： | 2/10页 |
| 文件大小： | 297K |
| 代理商： | MMSF4P01HD |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)(1)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
12
—
—
22
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 12 Vdc, VGS = 0 Vdc)
(VDS = 12 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
8.0 Vdc, VDS = 0)
ON CHARACTERISTICS(2)
IDSS
—
—
—
—
1.0
10
μ
Adc
IGSS
—
—
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (Negative)
VGS(th)
0.7
—
0.95
2.7
1.1
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 4.0 Adc)
(VGS = 2.7 Vdc, ID = 2.0 Adc)
RDS(on)
—
—
0.073
0.08
0.08
0.09
Ohm
Forward Transconductance (VDS = 2.5 Vdc, ID = 2.0 Adc)
gFS
3.0
7.0
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
1270
1700
pF
Output Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
—
935
1300
Reverse Transfer Capacitance
—
420
600
SWITCHING CHARACTERISTICS(3)
Turn–On Delay Time
RG = 6.0
)
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
25
35
ns
Rise Time
(VDS = 6.0 Vdc, ID = 4.0 Adc,
VGS = 2.7 Vdc,
—
250
350
Turn–Off Delay Time
—
58
80
Fall Time
—
106
150
Turn–On Delay Time
RG = 6.0
)
—
17
25
Rise Time
(VDD = 6.0 Vdc, ID = 4.0 Adc,
VGS = 4.5 Vdc,
—
71
100
Turn–Off Delay Time
—
95
140
Fall Time
—
106
150
Gate Charge
VGS = 4.5 Vdc)
—
24
34
nC
(VDS = 10 Vdc, ID = 4.0 Adc,
—
2.4
—
—
11.4
—
—
8.4
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(2)
(IS = 4.0 Adc, VGS = 0 Vdc)
(IS = 4.0 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
1.3
1.1
1.8
—
Vdc
Reverse Recovery Time
dIS/dt = 100 A/
μ
s)
trr
ta
tb
—
134
—
ns
(IS = 4.0 Adc, VGS = 0 Vdc,
—
66
—
—
68
—
Reverse Recovery Stored Charge
QRR
—
0.33
—
μ
C
(1) Negative sign for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(3) Switching characteristics are independent of operating junction temperature.
相关PDF资料 |
PDF描述 |
|---|---|
| MMSF5P02HD | SINGLE TMOS POWER MOSFET 8.7 AMPERES 20 VOLTS |
| MMSF7P03HD | SINGLE TMOS POWER MOSFET 30 VOLTS |
| MMT3823 | JUNCTION FIELD EFFECT TRANSISTOR |
| MMT4261 | RF TRANSISTOR |
| MMT72 | NPN SWITCHING TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMSF5N02HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS |
| MMSF5N03HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 5.0 AMPERES 30 VOLTS |
| MMSF5N03HDR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R |
| MMSF5P02HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 8.7 AMPERES 20 VOLTS |
| MMSF7N03HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 8.0 AMPERES 30 VOLTS |
发布紧急采购，3分钟左右您将得到回复。