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参数资料
| 型号： | MMSF4P01HD |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | SINGLE TMOS POWER FET 4.0 AMPERES 12 VOLTS |
| 中文描述： | 4 A, 12 V, 0.09 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 751-05, SOIC-8 |
| 文件页数： | 3/10页 |
| 文件大小： | 297K |
| 代理商： | MMSF4P01HD |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
R
(
R
ID
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (
°
C)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
ID
ID
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
0
4
8
Figure 3. On–Resistance versus
Gate–To–Source Voltage
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
10
1000
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
VDS
≥
10 V
–55
°
C
25
°
C
ID = 2 A
0
4
8
0
– 25
0
25
50
75
100
125
150
0
3
6
12
VGS = 0 V
TJ = 125
°
C
TJ = 25
°
C
VGS = 2.7 V
100
9
100
°
C
2
6
6
2
4.5 V
8
6
4
2
0
TJ = 100
°
C
0.16
0.12
0.08
0.04
0
0.1
0.09
0.08
0.06
8
6
4
2
0
1
1.6
1.4
2
1.2
1.8
2.4
2.2
0.07
0.5
1
2
1.5
VGS = 4.5 V
ID = 4 A
TJ = 25
°
C
4.5 V
3.1 V
0
0.6
0.4
1
0.2
0.8
1.4
1.6
1.2
1.8
2
TJ = 25
°
C
VGS = 8 V
1.5 V
2.5 V
1.7 V
1.9 V
2.1 V
2.3 V
2.7 V
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