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参数资料
| 型号： | MMSF7P03HD |
| 厂商： | Motorola, Inc. |
| 英文描述： | SINGLE TMOS POWER MOSFET 30 VOLTS |
| 中文描述： | 单任务操作系统功率MOSFET 30伏 |
| 文件页数： | 3/10页 |
| 文件大小： | 214K |
| 代理商： | MMSF7P03HD |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
R
(
R
0
0
0.2
0.4
0.6
2.0
0
8.0
10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
1.5
2.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
2.5
4.0
ID
Figure 2. Transfer Characteristics
2.0
4.0
10
0.20
0.25
0.30
1.0
2.0
3.0
9.0
0.020
0.040
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–to–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0
–50
0.8
1.2
1.6
1.0
100
1000
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–to–Source Leakage
Current versus Voltage
I
VGS = 0 V
0.8
1.0
3.0
1.2
1.4
3.5
0.15
6.0
8.0
–25
0
25
50
75
100
125
150
TJ = 125
°
C
12
0.050
0.030
6.0
0
0.4
0
5.0
20
30
8.0
10
12
6.0
0.10
0.025
10
100
°
C
4.0
2.0
4.0
2.0
0.05
15
25
1.6
1.8
3.0
5.0
7.0
9.0
0.045
0.035
4.0
5.0
6.0
7.0
8.0
0.2
0.6
1.0
1.4
10
TJ = 25
°
C
ID = 7.0 A
10 V
6.0 V
4.5 V
4.3 V
4.1 V
3.9 V
3.7 V
3.5 V
VGS = 3.3 V
3.1 V
2.9 V
2.7 V
2.5 V
TJ = 25
°
C
TJ = – 55
°
C
100
°
C
25
°
C
TJ = 25
°
C
VGS = 4.5 V
10 V
VGS = 10 V
VDS
≥
10 V
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