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| 型号： | MMSF7P03HDR2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 6/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 7A 8-SOIC |
| 产品变化通告： | LTB Notification 03/Jan/2008 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 35 毫欧 @ 5.3A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 75.8nC @ 6V |
| 输入电容 (Ciss) @ Vds： | 1680pF @ 24V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
MMSF7P03HD
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curve (Figure
12) defines the maximum simultaneous drain?to?source
voltage and drain current that a transistor can handle safely
when it is forward biased. Curves are based upon maximum
peak junction temperature and a case temperature (T C ) of
25 ° C. Peak repetitive pulsed power limits are determined by
using the thermal response data in conjunction with the
procedures discussed in AN569, “Transient Thermal
Resistance ? General Data and Its Use.”
Switching between the off?state and the on?state may
traverse any load line provided neither rated peak current
(I DM ) nor rated voltage (V DSS ) is exceeded, and that the
transition time (t r , t f ) does not exceed 10 m s. In addition the
total power averaged over a complete switching cycle must
not exceed (T J(MAX) ? T C )/(R q JC ).
A power MOSFET designated E?FET can be safely used
in switching circuits with unclamped inductive loads. For
100
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and must be adjusted for operating
conditions differing from those specified. Although industry
practice is to rate in terms of energy, avalanche energy
capability is not a constant. The energy rating decreases
non?linearly with an increase of peak current in avalanche
and peak junction temperature.
Although many E?FETs can withstand the stress of
drain?to?source avalanche at currents up to rated pulsed
current (I DM ), the energy rating is specified at rated
continuous current (I D ), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 13). Maximum
energy at currents below rated continuous I D can safely be
assumed to equal the values indicated.
5000
10
V GS = 12 V
SINGLE PULSE
T A = 25 ° C
1 ms
4500
4000
I D = 7.0 A
10 ms
3500
3000
1.0
dc
2500
2000
0.1
R DS(on) LIMIT
1500
1000
0.0
1 0.1
THERMAL LIMIT
PACKAGE LIMIT
1.0
10
100
500
0
25
45
65
85
105
125
145
V DS , DRAIN?TO?SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
6
T J , STARTING JUNCTION TEMPERATURE ( ° C)
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMSF7P03HDR2G | 功能描述:MOSFET PFET SO8S 30V 7A 35mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MM-SIO-R-01 | 功能描述:单板计算机 MiniModule Super I/O for CM 730 Legacy IO RoHS:否 制造商:Ampro By ADLINK 外观尺寸:EPIC 处理器类型:Intel Atom D510 频率:1.66 GHz 存储容量:2 GB (max) 存储类型:DDR2, L2 Cache 接口类型:Ethernet, PS/2, SATA, Serial, USB 工作电源电压:5 V, 12 V 功耗:13 W 最大工作温度:+ 70 C 尺寸:165.1 mm x 114.3 mm |
| MMSKG1 | 制造商:Siemens 功能描述: |
| MMSL101 | 制造商:Preh Elec. 功能描述: |
| MM-SMART-10 | 制造商:IDEC Corporation 功能描述:Starter Kit; UL Listed, CE Certified 制造商:IDEC Corporation 功能描述:PROGRAMMABLE LOGIC CONTROLLER; For Use With:MicroSmart series PLCs; Supply Voltage:24VDC ;RoHS Compliant: Yes 制造商:IDEC Corporation 功能描述:MicroSmart Starter Kit For Programmable Logic Controllers 制造商:IDEC CORPORATION 功能描述:MicroSmart Starter Kit w/ FC4A |
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