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参数资料
| 型号： | MMST2222A |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ULTRA SMALL, PLASTIC PACKAGE-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 0K |
| 代理商： | MMST2222A |
MMST2222A
NPN
Plastic-Encapsulate
Transistors
Features
Power Dissipation: 0.2W
Ultra-small surface mount package
Marking: K3P
Maxim um Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
75
V
VEBO
Emitter-Base Voltage
6.0
V
ICBO
Collector Cut-off Current
(VCB=70V, IE=0)
100
mA
ICEO
Collector Cut-off Current
(VCE=35V, IB=0)
100
mA
IEBO
Emitter Cut-off Current
(VEB=3V, IC=0)
100
mA
PC
Power dissipation
(1)
200
mW
TJ
Junction Temperature
-55 to +150
℃
TSTG
Storage Temperature
-55 to +150
℃
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS (2)
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=1.0mAdc, IB=0)
40
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=10mAdc, IE=0)
75
---
Vdc
V(BR)EBO
Collector-Emitter Breakdown Voltage
(IE=10uAdc, IC=0)
6.0
---
Vdc
ON CHARACTERISTICS(2)
hFE
DC Current Gain
(IC=150mAdc, VCE=10Vdc)
(IC=1.0mAdc, VCE=10Vdc)
100
50
300
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
---
0.6
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
---
1.2
Vdc
fT
Transition Frequency
(VCE=20V, IC=20mA, f=100MHz)
300
---
Hz
Cob
Output Capacitance
(VCB=10V, IE=0mA, f=1MHz)
---
8
pF
td
Delay Time
(VCC=30V , Icc=150mA ,VBE(off)=0.5V,
IB1=15mA)
---
10
ns
tr
Rise Time
(VCC=30V , Icc=150mA ,VBE(off)=0.5V,
IB1=15mA)
---
25
ns
ts
Storage Time
(VCC=30V , Icc=150mA , IB1=IB2=15mA)
---
225
ns
tf
Fall Time
(VCC=30V , Icc=150mA , IB1=IB2=15mA)
---
60
ns
SOT-323
Suggested Solder
Pad Layout
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.071
.087
1.80
2.20
B
.045
.053
1.15
1.35
C
.079
.087
2.00
2.20
D
.026 Nominal
0.65Nominal
E
.047
.055
1.20
1.40
F
.012
.016
.30
.40
G
.000
.004
.000
.100
H
.035
.039
.90
1.00
J
.004
.010
.100
.250
K
.012
.016
.30
.40
A
C
B
D
E
F
G
H
J
1.90
0.70
0.90
0.65
DIMENSIONS
K
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
Revision: 2
2006/05/13
TM
Micro Commercial Components
E
B
C
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
www.mccsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMST2222A_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMST2222A_11 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:NPN Plastic-Encapsulate Transistors |
| MMST2222A_2 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMST2222A-7 | 功能描述:两极晶体管 - BJT 40V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMST2222A-7-F | 功能描述:两极晶体管 - BJT 40V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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