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参数资料
| 型号： | MMST6427-13 |
| 厂商： | DIODES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ULTRA SMALL, PLASTIC PACKAGE-3 |
| 文件页数： | 2/3页 |
| 文件大小： | 70K |
| 代理商： | MMST6427-13 |
DS30166 Rev. 6 - 1
2 of 3
MMST6427
www.diodes.com
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
V(BR)CBO
40
V
IC = 100
mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
V
IC = 100mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
12
V
IE = 10
mA, IC = 0
Collector Cutoff Current
ICBO
50
nA
VCB = 30V, IE = 0
Collector Cutoff Current
ICEO
1.0
mA
VCE = 25V, IB = 0
Emitter Cutoff Current
IEBO
50
nA
VEB = 10V, IC = 0
ON CHARACTERISTICS (Note 3)
DC Current Gain
hFE
10,000
20,000
14,000
100,000
200,000
140,000
IC = 10mA, VCE = 5.0V
IC = 100mA, VCE = 5.0V
IC = 500mA, VCE = 5.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
1.2
1.5
V
IC = 50mA, IB = 0.5mA
IC = 500mA, IB = 0.5mA
Base-Emitter Saturation Voltage
VBE(SAT)
2.0
V
IC = 500mA, IB = 0.5mA
Base-Emitter On Voltage
VBE(ON)
1.75
V
IC = 50mA, VCE =5.0V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
8.0 Typical
pF
VCB = 10V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
15 Typical
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Electrical Characteristics @ TA = 25°C unless otherwise specified
Ordering Information (Note 4)
Device
Packaging
Shipping
MMST6427-7
SOT-323
3000/Tape & Reel
Notes:
3. Short duration test pulse used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMST6427-7-F.
Marking Information
K1D= Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
12
3
4
5
6
7
89
O
N
D
K1D
YM
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
JK
L
M
N
P
R
ST
U
V
W
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMST6427-7 | 功能描述:达林顿晶体管 NPN BIPOLAR RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MMST6427-7-F | 功能描述:达林顿晶体管 NPN BIPOLAR RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MMST6428 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SOT-23VAR |
| MMST6428T146 | 功能描述:两极晶体管 - BJT SMT NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMST6838 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 200MA I(C) | SOT-23VAR |
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