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参数资料
| 型号： | MMSTA42 |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | GREEN, PLASTIC PACKAGE-3 |
| 文件页数： | 1/5页 |
| 文件大小： | 221K |
| 代理商： | MMSTA42 |
MMSTA42
NPN General Purpose Transistor
FEATURES
For switching and amplifier applications.
Complementary PNP Type Available (MMSTA92)
MECHANICAL DATA
Case: SOT-323 Plastic
Case material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
Lead Free in RoHS 2002/95/EC Compliant
Maximum Ratings @ TA = 25℃
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
300
V
Collector-Emitter Voltage
VCEO
300
V
Emitter-Base Voltage
VEBO
5
V
Collector Current -Continuous
IC
300
mA
Collector Power Dissipation
PC
300
mW
Junction Temperature
TJ
150
℃
Storage Temperature Range
TSTG
-55~+150
℃
Electrical Characteristics @ TA = 25℃ unless otherwise specified
Characteristic
Test Condition
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
IC=100A,IE=0
VCBO
300
V
Collector-emitter breakdown voltage
IC=1mA,IB=0
VCEO
300
V
Emitter-base breakdown voltage
IE=100A,IC=0
VEBO
5
V
Collector-base cut-off current
VCB=200V,IE=0
ICBO
0.25
uA
Emitter-base cut-off current
VEB=5V,IC=0
IEBO
0.1
uA
VCE=10V,IC=1mA
hFE1
60
V
VCE=10V,IC=10mA
hFE2
100
200
V
DC current gain
VCE=10V,IC=30mA
hFE3
75
V
Collector-emitter saturation voltage
IC=20mA,IB=2mA
VCE(sat)
0.2
V
Base-emitter saturation voltage
IC=20mA,IB=2mA
VBE(sat)
0.9
V
Transition frequency
VCE=20V,IC=10mA,
f=30MHz
fT
50
MHz
REV.1, Oct-2010, KSNR19
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMSTA42_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMSTA42_11 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:NPN Small Signal Transistors |
| MMSTA42_2 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMSTA42-7 | 功能描述:两极晶体管 - BJT 300V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMSTA42-7-F | 功能描述:两极晶体管 - BJT 300V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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