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参数资料
| 型号： | MMSTA56T146 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SC-59, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 0K |
| 代理商： | MMSTA56T146 |
SSTA56 / MMSTA56
Transistors
Rev.A
1/2
PNP general purpose transistor
SSTA56 / MMSTA56
Features
External dimensions (Unit : mm)
1) BVCEO
40V (IC = 100 A)
SSTA56
MMSTA56
ROHM : SST3
JEDEC : SOT-23
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
0~0.1
0.2Min.
2.4
±
0.2
1.3
0.95
0.45±0.1
0.15
0.4
2.9±0.2
1.9±0.2
0.95 0.95
+
0.2 0.1
0.1
+0.2
+0.1
0.06
+0.1
0.05
(2)
(1)
(3)
0~0.1
2.8
±
0.2
1.6
0.3Min.
1.1
0.8±0.1
0.15
0.4
2.9±0.2
1.9±0.2
0.95 0.95
+
0.2 0.1
0.1
+0.2
+0.1
0.06
+0.1
0.05
(2)
(1)
(3)
All terminals have same dimensions
2) Complements the SSTA06 / MMSTA06.
Package, marking and packaging specifications
Part No.
SSTA56
SST3
R2G
T116
3000
MMSTA56
SMT3
R2G
T146
3000
Packaging type
Marking
Code
Basic ordering unit (pieces)
Absolute maximum ratings (Ta=25 C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Tj
Tstg
PC
Limits
80
4
0.5
150
55 to +150
0.2
Unit
V
A
W
0.35
W
Mounted on a 7×5×0.6mm CERAMIC SUBSTRATE
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical characteristics (Ta=25 C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVEBO
BVCEO
ICBO
ICEO
4
80
0.1
1
V
μA
IC
= 100mA
IC
= 1mA
VCB
= 80V
VCE
= 60V
VBE(on)
1.2
V
VCE(sat)
0.25
V
IC /IB
= 100mA/10mA
VCE/IB
= 1V/100mA
VCE
= 1V , IC = 10mA
hFE
100
VCE
= 1V , IC = 100mA
100
fT
50
MHz
VCE
= 1V , IE= 100mA , f=100MHz
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Base-emitter saturation voltage
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMSTA63 | 制造商:ROHM Semiconductor 功能描述:DARLINGTON PNP SMD (Surface Mount) Transistor SOT-23 - free partial T/R at 500. |
| MMSTA63_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:PNP SURFACE MOUNT DARLINGTON TRANSISTOR |
| MMSTA63_2 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:PNP SURFACE MOUNT DARLINGTON TRANSISTOR |
| MMSTA63-7 | 功能描述:达林顿晶体管 -500V 200mW RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MMSTA63-7-F | 功能描述:达林顿晶体管 -500V 200mW RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
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