参数资料
型号: MMSTA56T146
元件分类: 小信号晶体管
英文描述: 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: SC-59, 3 PIN
文件页数: 2/3页
文件大小: 0K
代理商: MMSTA56T146
SSTA56 / MMSTA56
Transistors
Rev.A
2/2
Electrical characteristic curves
0
400
300
200
100
500
2.0
0
0.4
0.8
1.2
1.6
IB=0mA
0.5mA
1.0mA
1.5mA
2.0mA
2.5mA
3.0mA
3.5mA
4.0mA
4.5mA
5.0mA
Ta=25
°C
IC
-COLLECTOR
CURRENT
(
mA)
VCE-COLLECTOR-EMITTER VOLTAGE (
V)
Fig.1 Grounded emitter output
characteristics
1
2
5
10
20
50 100 200 5001000
100
1000
10
h
FE
-DC
CURRENT
GAIN
IC-COLLECTOR CURRENT (
mA)
Ta=25
°C
VCC=5V
3V
1V
Fig.2 DC current gain vs. collector
current (
Ι )
1
10
100
1000
100
1000
10
h
FE
-DC
CURRENT
GAIN
IC-COLLECTOR CURRENT (
mA)
Ta=125
°C
25
°C
40°C
VCE=3V
Fig.3 DC current gain vs. collector
current (
ΙΙ )
1
10
100
1000
0.2
0.3
0.1
0
V
CE(SAT)
COLLECTOR
EMITTER
SATURATION
VOLTAGE
(V)
IC-COLLECTOR CURRENT (
mA)
IC / IB=10
Ta=125
°C
25
°C
40°C
Fig.4 Collector emitter saturation
voltage vs. collector current
1
10
100
1000
0.8
1.2
1.8
1.6
0.4
0.6
1.0
1.4
0.2
0
V
BE(SAT)
BASE
EMITTER
SATURATION
VOLTAGE
(
V)
IC-COLLECTOR CURRENT (
mA)
Ta=25
°C
IC
/ IB=10
Fig.5 Base-emitter saturation
voltage vs. collector current
1
10
100
1000
0.8
1.2
1.8
1.6
0.4
0.6
1.0
1.4
0.2
0
V
BE(ON)
BASE
EMITTER
VOLTAGE
(
V)
IC-COLLECTOR CURRENT (
mA)
VCE=3V
Ta=
40
°C
125
°C
25
°C
Fig.6 Grounded emitter propagation
characteristics
0.5
1
10
50
10
500
100
5
CAPACITANCE
(
pF)
REVERSE BIAS VOLTAGE (
V)
Ta=25
°C
f=1MHz
Cib
Cob
Fig.7 Input/output capecitance
vs. voltage
1
10
100
1000
100
1000
10
CURRENT
GAIN-BANDWIDTH
PRODUCT
(
MHz)
IC-COLLECTOR CURRENT (
mA)
Ta=25
°C
VCE=10V
Fig.8 Gain bandwidth product
vs. collector current
相关PDF资料
PDF描述
MMSTA92-13 100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MMT-108-01-SM-DH 16 CONTACT(S), MALE, RIGHT ANGLE TWO PART BOARD CONNECTOR, SURFACE MOUNT
MMT-102-01-F-SH 2 CONTACT(S), MALE, RIGHT ANGLE TWO PART BOARD CONNECTOR, SURFACE MOUNT
MMT-104-01-F-SH 4 CONTACT(S), MALE, RIGHT ANGLE TWO PART BOARD CONNECTOR, SURFACE MOUNT
MMT-105-01-F-DH 10 CONTACT(S), MALE, RIGHT ANGLE TWO PART BOARD CONNECTOR, SURFACE MOUNT
相关代理商/技术参数
参数描述
MMSTA63 制造商:ROHM Semiconductor 功能描述:DARLINGTON PNP SMD (Surface Mount) Transistor SOT-23 - free partial T/R at 500.
MMSTA63_1 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:PNP SURFACE MOUNT DARLINGTON TRANSISTOR
MMSTA63_2 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:PNP SURFACE MOUNT DARLINGTON TRANSISTOR
MMSTA63-7 功能描述:达林顿晶体管 -500V 200mW RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
MMSTA63-7-F 功能描述:达林顿晶体管 -500V 200mW RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel