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参数资料
| 型号： | MMSTA92 |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ULTRA SMALL, PLASTIC PACKAGE-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 352K |
| 代理商： | MMSTA92 |
MMSTA92
PNP Small Signal
Transistors
Features
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and Switching
Ultra-small surface mount package
Marking:K3R
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
300
V
VCBO
Collector-Base Voltage
300
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current-Continuous
(1) (3)
100
mA
PC
Power dissipation
(1)
200
mW
TJ
Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=1.0mAdc, IB=0)
300
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
300
---
Vdc
V(BR)EBO
Collector-Emitter Breakdown Voltage
(IE=100uAdc, IC=0)
5.0
---
Vdc
ICBO
Collector-Base Cutoff Current
(VCB=200Vdc,IE=0)
---
250
nAdc
IEBO
Emitter-Base Cutoff Current
(VCE=3.0Vdc, IC=0)
---
100
nAdc
ON CHARACTERISTICS(2)
hFE
DC Current Gain
(IC=1.0mAdc, VCE=10Vdc)
(IC=10mAdc, VCE=10Vdc)
(IC=30mAdc, VCE=10Vdc)
25
40
25
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=20mAdc, IB=2.0mAdc)
---
0.5
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=20mAdc, IB=2.0mAdc)
---
0.9
Vdc
SMALL SIGNALCHARACTERISTICS
fT
Current-Gain-Bandwidth Product
(VCE=20V, f=100MHz, IC=10mA)
50
---
MHz
CCB
Collector-Base Capacitance
(VCB=20V, f=1.0MHz, IE=0)
---
6.0
pF
Note: 1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width<300us, duty cycle<2%
3. When operated within safe operating area constraints.
SOT-323
Suggested Solder
Pad Layout
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.071
.087
1.80
2.20
B
.045
.053
1.15
1.35
C
.079
.087
2.00
2.20
D
.026 Nominal
0.65Nominal
E
.047
.055
1.20
1.40
F
.012
.016
.30
.40
G
.000
.004
.000
.100
H
.035
.039
.90
1.00
J
.004
.010
.100
.250
K
.012
.016
.30
.40
A
C
B
D
E
F
G
H
J
1.90
0.70
0.90
0.65
DIMENSIONS
K
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
Revision: 3
2006/05/11
TM
Micro Commercial Components
E
B
C
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
www.mccsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMSTA92_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMSTA92_11 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:PNP Small Signal Transistors |
| MMSTA92_2 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMSTA92-7 | 功能描述:两极晶体管 - BJT PNP BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMSTA92-7-F | 功能描述:两极晶体管 - BJT PNP BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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