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参数资料
| 型号： | MMSZ3V3ET3G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 3.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封装： | LEAD FREE, PLASTIC, CASE 425-04, 2 PIN |
| 文件页数： | 4/7页 |
| 文件大小： | 81K |
| 代理商： | MMSZ3V3ET3G |
MMSZ2V4ET1 Series
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)
Device
Marking
VZ1 (V)
ZZT1
(Note 9)
VZ2 (V)
ZZT2
(Note 9)
Max Reverse
Leakage Current
@ IZT1 = 2 mA
@ IZT2 = 0.1 mA
@ IZT2 =
0.5 mA
IR @ VR
Min
Nom
Max
W
Min
Max
W
mA
V
MMSZ27ET1, G
CN8
25.65
27
28.35
80
25
28.9
300
0.05
18.9
MMSZ30ET1
CN9
28.50
30
31.50
80
27.8
32
300
0.05
21
MMSZ33ET1
CP1
31.35
33
34.65
80
30.8
35
325
0.05
23.1
MMSZ36ET1
CP2
34.20
36
37.80
90
33.8
38
350
0.05
25.2
MMSZ39ET1
CP3
37.05
39
40.95
130
36.7
41
350
0.05
27.3
MMSZ43ET1, G
CP4
40.85
43
45.15
150
39.7
46
375
0.05
30.1
MMSZ47ET1
CP5
44.65
47
49.35
170
43.7
50
375
0.05
32.9
MMSZ51ET1
CP6
48.45
51
53.55
180
47.6
54
400
0.05
35.7
MMSZ56ET1
CP7
53.20
56
58.80
200
51.5
60
425
0.05
39.2
7. The type numbers shown have a standard tolerance of
±5% on the nominal Zener Voltage.
8. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms.
9. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for
IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1 kHz.
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and
best overall value.
* The “G” suffix indicates PbFree package available.
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| MMSZ4709-TP | 24 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMSZ3V3T1 | 功能描述:稳压二极管 3.3V 500mW RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| MMSZ3V3T1G | 功能描述:稳压二极管 3.3V 500mW RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| MMSZ3V3T1G | 制造商:ON Semiconductor 功能描述:Zener Diode |
| MMSZ3V3T1H | 制造商:ON Semiconductor 功能描述: |
| MMSZ3V3T3 | 功能描述:稳压二极管 3.3V 500mW RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
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