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参数资料
| 型号： | MMSZ4678T3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1.8 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封装： | PLASTIC, CASE 425-04, 2 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 74K |
| 代理商： | MMSZ4678T3 |
Semiconductor Components Industries, LLC, 2005
August, 2005 Rev. 7
1
Publication Order Number:
MMSZ4678T1/D
MMSZ4678T1 Series
Preferred Device
Zener Voltage Regulators
500 mW SOD123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD123 package. These devices provide a
convenient alternative to the leadless 34package style.
Features
500 mW Rating on FR4 or FR5 Board
Wide Zener Reverse Voltage Range 1.8 V to 43 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 kV) per Human Body Model
PbFree Packages are Available
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260
°C for 10 Seconds
POLARITY:
Cathode indicated by polarity band
FLAMMABILITY RATING:
UL 94 V0
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Total Power Dissipation on FR5 Board,
Derated above 75
°C
PD
500
6.7
mW
mW/
°C
Thermal Resistance, (Note 2)
JunctiontoAmbient
RqJA
340
°C/W
Thermal Resistance, (Note 2)
JunctiontoLead
RqJL
150
°C/W
Junction and Storage Temperature Range
TJ, Tstg
55 to
+150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR5 = 3.5 X 1.5 inches, using the minimum recommended footprint.
2. Thermal Resistance measurement obtained via infrared Scan Method.
1
Cathode
2
Anode
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of this
data sheet.
DEVICE MARKING INFORMATION
Devices listed in bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.
http://onsemi.com
SOD123
CASE 425
STYLE 1
1
2
Device
Package
Shipping
ORDERING INFORMATION
MMSZ4xxxT1
SOD123
3000/Tape & Reel
MARKING DIAGRAM
MMSZ4xxxT3
SOD123
10000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMSZ4xxxT1G
SOD123
(PbFree)
3000/Tape & Reel
MMSZ4xxxT3G
SOD123
(PbFree)
10000/Tape & Reel
xx
= Device Code (Refer to page 3)
M
= Date Code
G
= PbFree Package
(Note: Microdot may be in either location)
xx M
G
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMSZ4678T3G | 功能描述:稳压二极管 1.8V 500mW RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| MMSZ4678-TP | 制造商:Micro Commercial Components (MCC) 功能描述:DIODE ZENER 1.8V 500MW SOD-123 |
| MMSZ4679 | 制造商:EIC 制造商全称:EIC discrete Semiconductors 功能描述:ZENER DIODES |
| MMSZ4679T1 | 功能描述:稳压二极管 2V 500mW RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| MMSZ4679T1G | 功能描述:稳压二极管 2V 500mW RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
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