- 您现在的位置：买卖IC网 > PDF目录149476 > MMSZ5250ET3G (ON SEMICONDUCTOR) 20 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE PDF资料下载
参数资料
| 型号： | MMSZ5250ET3G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 20 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封装： | LEAD FREE, PLASTIC, CASE 425-04, 2 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 79K |
| 代理商： | MMSZ5250ET3G |
Semiconductor Components Industries, LLC, 2006
March, 2006 Rev. 6
1
Publication Order Number:
MMSZ5221ET1/D
MMSZ5221ET1 Series
Preferred Device
Zener Voltage Regulators
500 mW SOD123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD123 package. These devices provide a
convenient alternative to the leadless 34package style.
Features
500 mW Rating on FR4 or FR5 Board
Wide Zener Reverse Voltage Range 2.4 V to 110 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
General Purpose, Medium Current
ESD Rating of Class 3 (>16 kV) per Human Body Model
Peak Power 225 W (8 x 20 ms)
PbFree Packages are Available
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260
°C for 10 Seconds
POLARITY:
Cathode indicated by polarity band
FLAMMABILITY RATING:
UL 94 V0
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Power Dissipation @ 20
ms (Note 1)
@ TL ≤ 25°C
Ppk
225
W
Total Power Dissipation on FR5 Board,
Derated above 75
°C
PD
500
6.7
mW
mW/
°C
Thermal Resistance, (Note 2)
JunctiontoAmbient
RqJA
340
°C/W
Thermal Resistance, (Note 2)
JunctiontoLead
RqJL
150
°C/W
Junction and Storage Temperature Range
TJ, Tstg
55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Nonrepetitive current pulse per Figure 11.
2. Thermal Resistance measurement obtained via infrared Scan Method.
3. FR5 = 3.5 x 1.5 inches, using the minimum recommended footprint.
SOD123
CASE 425
STYLE 1
1
Cathode
2
Anode
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
DEVICE MARKING INFORMATION
1
2
Devices listed in bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
MMSZ52xxET1
SOD123
3000/Tape & Reel
MARKING DIAGRAM
MMSZ52xxET3
SOD123
10000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMSZ52xxET1G
SOD123
(PbFree)
3000/Tape & Reel
MMSZ52xxET3G
SOD123
(PbFree)
10000/Tape & Reel
xxx = Device Code (Refer to page 2)
(Note: Microdot may be in either location)
xxx M
G
1
相关PDF资料 |
PDF描述 |
|---|---|
| MCL101B-TR3 | 0.03 A, SILICON, SIGNAL DIODE |
| MAVR-000404CK-287 | HF-UHF BAND, 18 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
| MQ1N5222CE3 | 2.5 V, 0.417 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AA |
| MQ1N5229AE3 | 4.3 V, 0.417 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AA |
| MQ1N5233E3TR | 6 V, 0.417 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMSZ5251B | 功能描述:稳压二极管 22V 0.5W Zener RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| MMSZ5251B RH | 制造商:SKMI/Taiwan 功能描述:Diode Zener Single 22V 5% 500mW 2-Pin SOD-123F T/R |
| MMSZ5251B_Q | 功能描述:稳压二极管 22V 0.5W Zener RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| MMSZ5251B-7 | 功能描述:稳压二极管 22V 500mW RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| MMSZ5251B-7-F | 功能描述:稳压二极管 22V 500mW RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。