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参数资料
| 型号： | MMT05A230T3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 浪涌电流限制器 |
| 英文描述： | Thyristor Surge Protectors(晶阐管浪涌电压保护器) |
| 中文描述： | 265 V, SILICON SURGE PROTECTOR |
| 封装： | CASE 403D-02, SMA, 2 PIN |
| 文件页数： | 1/7页 |
| 文件大小： | 62K |
| 代理商： | MMT05A230T3 |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 5
1
Publication Order Number:
MMT05A230T3/D
MMT05A230T3,
MMT05A260T3,
MMT05A310T3
Preferred Devices
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakovertriggered crowbar
protectors. Turnoff occurs when the surge current falls below the
holding current value.
Secondary protection applications for electronic telecom equipment
at customer premises.
High Surge Current Capability:
50 Amps
10 x 1000
μ
sec; for
Controlled Temperature Environments in the
SMA
package
The MMT05A230T3 Series is used to help equipment meet various
regulatory requirements including: Telcordia 1089, ITU K.20 &
K.21, IEC 950 and FCC Part 68
Bidirectional Protection in a Single Device
Little Change of Voltage Limit with Transient Amplitude or Rate
Freedom from Wearout Mechanisms Present in NonSemiconductor
Devices
FailSafe, Shorts When Overstressed, Preventing Continued
Unprotected Operation
Surface Mount Technology (SMT)
Indicates UL Registered File #E210057
PbFree Packages are Available
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
OffState Voltage Maximum
MMT05A230T3
MMT05A260T3
MMT05A310T3
V
DM
170
200
270
Volts
Maximum Pulse Surge Short Circuit
Current NonRepetitive
Double Exponential Decay Waveform
(Notes 1 and 2)
8 x 20 sec
10 x 160 sec
10 x 560 sec
10 x 1000 sec
I
PPS1
I
PPS2
I
PPS3
I
PPS4
150
100
70
50
A(pk)
Maximum NonRepetitive Rate of
Change of OnState Current Double
Exponential Waveform,
I
PK
= 50 A, P
W
= 15 s
di/dt
100
A/ s
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
BIDIRECTIONAL TSPD
50 AMP SURGE
265 thru 365 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
MT1
MT2
SMA
(No Polarity)
CASE 403D
xxx
A
Y
WW
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
MARKING DIAGRAM
xxx
AYWW
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
相关PDF资料 |
PDF描述 |
|---|---|
| MMT05A260T3 | Thyristor Surge Protectors(晶阐管浪涌电压保护器) |
| MMT05A310T3 | Thyristor Surge Protectors(晶阐管浪涌电压保护器) |
| MMT08B064T3 | Thyristor Surge Protectors High Voltage Bidirectional TSPD(高压，双向，TSPD，闸流管浪涌保护器) |
| MMT08B310T3 | Thyristor Surge Protectors(晶阐管浪涌电压保护器) |
| MMUN2238LT1 | Bias Resistor Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMT05A230T3_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Thyristor Surge Protectors High Voltage Bidirectional TSPD |
| MMT05A230T3G | 功能描述:硅对称二端开关元件 50A Surge 265V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| MMT05A260T3 | 功能描述:硅对称二端开关元件 50A Surge 320V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| MMT05A260T3G | 功能描述:硅对称二端开关元件 50A Surge 320V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| MMT05A310T3 | 功能描述:硅对称二端开关元件 50A Surge 365V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
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