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参数资料
| 型号： | MMUN2213LT1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network(NPN型偏置电阻晶体管) |
| 中文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | CASE 318-08, TO-236, 3 PIN |
| 文件页数： | 1/12页 |
| 文件大小： | 99K |
| 代理商： | MMUN2213LT1 |
Semiconductor Components Industries, LLC, 2005
August, 2005 Rev. 7
Publication Order Number:
MMUN2211LT1/D
MMUN2211LT1 Series
Preferred Devices
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SOT-23 package which is designed for low power surface mount
applications.
Features
Simplifies Circuit Design
Reduces Board Space and Component Count
PbFree Packages are Available
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50
Vdc
Collector-Emitter Voltage
V
CEO
50
Vdc
Collector Current
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
246 (Note 1)
400 (Note 2)
1.5 (Note 1)
2.0 (Note 2)
mW
°
C/W
Thermal Resistance, Junction-to-Ambient
R
JA
508 (Note 1)
311 (Note 2)
°
C/W
Thermal Resistance, Junction-to-Lead
R
JL
174 (Note 1)
208 (Note 2)
°
C/W
Junction and Storage Temperature
Range
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR4 @ minimum pad
2. FR4 @ 1.0 x 1.0 inch pad
SOT23
CASE 318
STYLE 6
MARKING DIAGRAM
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
Preferred
devices are recommended choices for future use
and best overall value.
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 11 of this data sheet.
ORDERING INFORMATION
A8x M
1
A8x
M
= Specific Device Code
= Date Code
= PbFree Package
(Note: Microdot may be in either location)
相关PDF资料 |
PDF描述 |
|---|---|
| MMUN2238LT1 | Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network(NPN型偏置电阻晶体管) |
| MMVL409T1 | Silicon Tuning Diode(调谐二极管) |
| MO-220 | PowerPAK MLP44-16 (POWER IC ONLY) |
| MP108 | POWER OPERATIONAL AMPLIFIER |
| MP108A | POWER OPERATIONAL AMPLIFIER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMUN2213LT1G | 功能描述:开关晶体管 - 偏压电阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| MMUN2213LT3G | 制造商:ON Semiconductor 功能描述: |
| MMUN2213RLT1 | 制造商:ETL 制造商全称:E-Tech Electronics LTD 功能描述:Bias Resistor Transistor |
| MMUN2214 | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:Bias Resistor Transistor |
| MMUN2214L | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Digital Transistors (BRT) R1 = 10 k, R2 = 47 k |
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