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参数资料
| 型号： | MMUN2213LT1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network(NPN型偏置电阻晶体管) |
| 中文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | CASE 318-08, TO-236, 3 PIN |
| 文件页数： | 5/12页 |
| 文件大小： | 99K |
| 代理商： | MMUN2213LT1 |
MMUN2211LT1 Series
http://onsemi.com
5
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2212LT1
Figure 7. V
CE(sat)
vs. I
C
0.001
0.01
0.1
1
40
I
C
, COLLECTOR CURRENT (mA)
0
20
60
80
I
C
/I
B
= 10
V
C
M
(
T
A
= 25
°
C
25
°
C
75
°
C
Figure 8. DC Current Gain
1000
10
I
C
, COLLECTOR CURRENT (mA
)
100
10
1
100
V
CE
= 10 V
h
F
D
T
A
= 75
°
C
25
°
C
25
°
C
C
o
C
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
100
0
V
in
, INPUT VOLTAGE (VOLTS)
10
1
0.1
0.01
0.001
2
4
6
8
10
0
I
C
, COLLECTOR CURRENT (mA)
100
10
1
0.1
10
20
30
40
50
Figure 11. Input Voltage vs. Output Current
50
0
10
20
30
40
4
3
2
1
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
f = 1 MHz
l
E
= 0 A
T
A
= 25
°
C
V
O
= 5 V
V
O
= 0.2 V
I
C
C
V
i
I
T
A
= 25
°
C
75
°
C
25
°
C
T
A
= 25
°
C
75
°
C
25
°
C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMUN2213LT1G | 功能描述:开关晶体管 - 偏压电阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| MMUN2213LT3G | 制造商:ON Semiconductor 功能描述: |
| MMUN2213RLT1 | 制造商:ETL 制造商全称:E-Tech Electronics LTD 功能描述:Bias Resistor Transistor |
| MMUN2214 | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:Bias Resistor Transistor |
| MMUN2214L | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Digital Transistors (BRT) R1 = 10 k, R2 = 47 k |
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