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参数资料
| 型号： | MMUN2232LT3 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | TO-236AB, 3 PIN |
| 文件页数： | 5/12页 |
| 文件大小： | 181K |
| 代理商： | MMUN2232LT3 |
MMUN2211LT1 SERIES
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
—
100
nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
—
500
nAdc
Emitter-Base Cutoff Current
MMUN2211LT1
(VEB = 6.0 V, IC = 0)
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
IEBO
—
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
mAdc
Collector-Base Breakdown Voltage (IC = 10 A, IE = 0)
V(BR)CBO
50
—
Vdc
Collector-Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
—
Vdc
ON CHARACTERISTICS(3)
DC Current Gain
MMUN2211LT1
(VCE = 10 V, IC = 5.0 mA)
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
hFE
35
60
80
160
3.0
8.0
15
80
60
100
140
350
5.0
15
30
200
150
—
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MMUN2230LT1/MMUN2231LT1
(IC = 10 mA, IB = 1 mA) MMUN2215LT1/MMUN2216LT1
MMUN2232LT1/MMUN2233LT1/MMUN2234LT1
VCE(sat)
—
0.25
Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k )
MMUN2211LT1
MMUN2212LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k )
MMUN2213LT1
VOL
—
0.2
Vdc
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k )
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k )
MMUN2230LT1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k )
MMUN2215LT1
MMUN2216LT1
MMUN2233LT1
VOH
4.9
—
Vdc
3. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%.
相关PDF资料 |
PDF描述 |
|---|---|
| MMUN2213LT3 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMUN2215LT3 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMUN2233LT3 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MN1911 | OTHER DSP, PQFP84 |
| MN5521Q | MULTIFUNCTION PERIPHERAL, PQFP208 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMUN2232RLT1 | 制造商:ETL 制造商全称:E-Tech Electronics LTD 功能描述:Bias Resistor Transistor |
| MMUN2233 | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:Bias Resistor Transistor |
| MMUN2233L | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Digital Transistors (BRT) R1 = 4.7 k, R2 = 47 k |
| MMUN2233LT1 | 功能描述:开关晶体管 - 偏压电阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| MMUN2233LT1G | 功能描述:开关晶体管 - 偏压电阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
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