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参数资料
| 型号： | MMUN2233LT3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | CASE 318-08, 3 PIN |
| 文件页数： | 10/12页 |
| 文件大小： | 104K |
| 代理商： | MMUN2233LT3 |
MMUN2211LT1 Series
http://onsemi.com
7
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2214LT1
Figure 17. VCE(sat) vs. IC
IC, COLLECTOR CURRENT (mA)
0
204060
80
1
0.1
0.01
0.001
IC/IB = 10
TA = 25°C
25
°C
75
°C
V
CE(sat),
MAXIMUM
COLLECT
OR
VOL
T
AGE
(VOL
TS)
Figure 18. DC Current Gain
1
10
100
IC, COLLECTOR CURRENT (mA)
VCE = 10
300
250
200
150
100
50
0
2
4
6
8
15 20 40 50 60 70 80 90
h
FE,
DC
CURRENT
GAIN
(NORMALIZED)
25
°C
TA = 75°C
25
°C
4
3.5
3
2.5
2
1.5
1
0.5
0
02
46
8
10 15 20 25 30
35 40
45 50
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 19. Output Capacitance
f = 1 MHz
lE = 0 A
TA = 25°C
I C,
COLLECT
OR
CURRENT
(mA)
C
ob,
CAP
ACIT
ANCE
(pF)
100
10
1
02
46
8
10
Figure 20. Output Current vs. Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
VO = 5 V
TA = 25°C
75
°C
25
°C
10
1
0.1
010
20
30
40
50
Figure 21. Input Voltage vs. Output Current
IC, COLLECTOR CURRENT (mA)
VO = 0.2 V
V
in,
INPUT
VOL
T
AGE
(VOL
TS)
TA = 25°C
75
°C
25
°C
相关PDF资料 |
PDF描述 |
|---|---|
| MMUN2232LT3 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMUN2234LT3 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMUN2212LT3 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMUN2212LT1 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMUN2211LT3 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMUN2233RL34 | 制造商:ETL 制造商全称:E-Tech Electronics LTD 功能描述:Bias Resistor Transistor |
| MMUN2233RLT1 | 制造商:LRC 制造商全称:Leshan Radio Company 功能描述:Bias Resistor Transistor |
| MMUN2234 | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:Bias Resistor Transistor NPN Silicon |
| MMUN2234L | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Digital Transistors (BRT) R1 = 22 k, R2 = 47 k |
| MMUN2234LT1 | 功能描述:开关晶体管 - 偏压电阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
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