参数资料
型号: MMUN2233LT3
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封装: CASE 318-08, 3 PIN
文件页数: 7/12页
文件大小: 104K
代理商: MMUN2233LT3
MMUN2211LT1 Series
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2211LT1
100
10
1
0.1
0.01
0.001
0
123
4
Vin, INPUT VOLTAGE (VOLTS)
5
678
9
10
VO = 5 V
I C,
COLLECT
OR
CURRENT
(mA)
TA = 25°C
75
°C
25
°C
1000
100
10
1
10
100
IC, COLLECTOR CURRENT (mA)
50
0
1020
3040
4
3
1
2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
f = 1 MHz
lE = 0 A
TA = 25°C
VCE = 10 V
Figure 1. Derating Curve
250
200
150
100
50
0
50
0
50
100
150
TA, AMBIENT TEMPERATURE (5°C)
Figure 2. VCE(sat) vs. IC
P
D,
POWER
DISSIP
A
TION
(MILLIW
A
TTS)
C
ob,
CAP
ACIT
ANCE
(pF)
h
FE,
DC
CURRENT
GAIN
(NORMALIZED)
RθJA= 625°C/W
TA = 75°C
25
°C
25
°C
10
020
30
IC, COLLECTOR CURRENT (mA)
10
1
0.1
40
50
Figure 3. DC Current Gain
V
in,
INPUT
VOL
T
AGE
(VOL
TS)
TA = 25°C
75
°C
25
°C
VO = 0.2 V
1
0.1
0.01
0.001
020
40
60
80
IC, COLLECTOR CURRENT (mA)
IC/IB = 10
V
CE(sat),
MAXIMUM
COLLECT
OR
VOL
T
AGE
(VOL
TS)
TA = 25°C
75
°C
25
°C
Figure 4. Output Capcitance
Figure 5. Output Current vs. Input Voltage
Figure 6. Input Voltage vs. Output Current
相关PDF资料
PDF描述
MMUN2232LT3 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
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MMUN2234LT1 功能描述:开关晶体管 - 偏压电阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel