参数资料
型号: MMUN2238LT3
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封装: CASE 318-08, 3 PIN
文件页数: 12/12页
文件大小: 104K
代理商: MMUN2238LT3
MMUN2211LT1 Series
http://onsemi.com
9
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2233LT1
75
°C
TA = 25°C
Figure 27. VCE(sat) vs. IC
25
°C
IC/IB = 10
12
1
0.1
0.001
17
7
222
IC, COLLECTOR CURRENT (mA)
V
CE(sat),
MAXIMUM
COLLECT
OR
VOL
T
AGE
(VOL
TS)
0.01
27
32
Figure 28. DC Current Gain
VCE = 10 V
1
1000
100
10
1
10
IC, COLLECTOR CURRENT (mA)
h
FE,
DC
CURRENT
GAIN
TA = 25°C
100
75
°C
25
°C
Figure 29. Output Capacitance
f = 1 MHz
IE = 0 A
TA = 25°C
0
0.5
3
20
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
C
ob,
CAP
ACIT
ANCE
(pF)
10
60
50
40
30
3.5
4
1.5
2.5
Figure 30. Output Current vs. Input Voltage
0
100
10
28
1
0.1
0.01
46
Vin, INPUT VOLTAGE (VOLTS)
I C
,COLLECT
OR
CURRENT
(mA)
VO = 5 V
TA = 25°C
75
°C
25
°C
Figure 31. Input Voltage vs. Output Current
VO = 0.2 V
0
10
12
18
30
1
0.1
IC, COLLECTOR CURRENT (mA)
TA = 25°C
624
75
°C
25
°C
V
in,
INPUT
VOL
T
AGE
(VOL
TS)
相关PDF资料
PDF描述
MMUN2233LT3 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMUN2232LT3 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMUN2234LT3 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMUN2212LT3 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMUN2212LT1 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
相关代理商/技术参数
参数描述
MMUN2240L 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:NPN Transistors with Monolithic Bias Resistor Network
MMUN2240LT1G 制造商:ON Semiconductor 功能描述:NPN DIGITAL TRANSISTOR (B - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / NPN DIGITAL TRANSISTOR (B
MMUN2241 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:Bias Resistor Transistor
MMUN2241LT1 功能描述:开关晶体管 - 偏压电阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel
MMUN2241LT1G 功能描述:开关晶体管 - 偏压电阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel