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参数资料
| 型号： | MMUN2238LT3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | CASE 318-08, 3 PIN |
| 文件页数： | 5/12页 |
| 文件大小： | 104K |
| 代理商： | MMUN2238LT3 |
MMUN2211LT1 Series
http://onsemi.com
2
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Thermal Resistance Junction-to-Ambient (surface mounted)
RθJA
625
°C/W
Operating and Storage Temperature Range
TJ, Tstg
65 to +150
°C
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
TL
260
10
°C
Sec
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
100
nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
500
nAdc
Emitter-Base Cutoff Current
MMUN2211LT1
(VEB = 6.0 V, IC = 0)
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2238LT1
MMUN2241LT1
IEBO
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
4.0
0.1
mAdc
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
Vdc
V(BR)CEO
50
Vdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
MMUN2211LT1
(VCE = 10 V, IC = 5.0 mA)
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2238LT1
MMUN2241LT1
hFE
35
60
80
160
3.0
8.0
15
80
160
60
100
140
350
5.0
15
30
200
150
350
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MMUN2230LT1/MMUN2231LT1
(IC = 10 mA, IB = 1 mA) MMUN2215LT1/MMUN2216LT1
MMUN2232LT1/MMUN2233LT1/MMUN2234LT1/
MMUN2238LT1
VCE(sat)
0.25
Vdc
2. Pulse Test: Pulse Width < 300
ms, Duty Cycle < 2.0%.
相关PDF资料 |
PDF描述 |
|---|---|
| MMUN2233LT3 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMUN2232LT3 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMUN2234LT3 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMUN2212LT3 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMUN2212LT1 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMUN2240L | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:NPN Transistors with Monolithic Bias Resistor Network |
| MMUN2240LT1G | 制造商:ON Semiconductor 功能描述:NPN DIGITAL TRANSISTOR (B - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / NPN DIGITAL TRANSISTOR (B |
| MMUN2241 | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:Bias Resistor Transistor |
| MMUN2241LT1 | 功能描述:开关晶体管 - 偏压电阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| MMUN2241LT1G | 功能描述:开关晶体管 - 偏压电阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
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