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Chapter 17 Appendices
XVII - 2
Overview
17-1
Overview
The MN101CF66DAL/BF is equivalent to MN101C66D except its Mask ROM is substituted with 64 KB of
Flash EEPROM, which is capable of being programmed /erased electrically. Normal operation is guaran-
teed with up to ten programmings.
The MN101CF66DAL/BF is programmed in one of two modes;
PROM writer mode, which uses a dedicated PROM writer for a microcontroller's stand-alone program-
ming. Onboard programming mode, which the CPU controls programming of a microcontroller on a
target board.
The 64 KB flash EEPROM is divided into three main areas.
Load program area (2 KB : #0x04000 to #0x047FF)
This area stores a load program for onboard programming mode. This area is overwritten only in PROM
writer mode. This area is write/erase-protected in the hardware during onboard programming mode.
Fixed user program area (4 KB : #0x04800 to #0x057FF)
This area stores an user program, which is write-protected in onboard programming mode. It is overwrit-
ten in PROM writer mode. This area is write/erase-protected in the hardware during onboard program-
ming mode.
User program area (58 KB : #0x05800 to #0x13FFF)
This area stores an user program. It is overwritten in both programming modes.
1 cycle of "erase-write" process is counted as 1 programming in every block.
That is, when several blocks are programmed one-time separately, programming count is
added by just the number of programming cycle. (For instance, when block 1 and 2 are
programmed separately, 2 program count is added.)
Therefore, program several blocks together to reduce the programming count.
Load program area
0x04000
6 KB
Erase block 1
58 KB
Erase block 2
0x05800
0x13FFF
User program area
Fixed user program area
User ROM area
17-1-1
Overview
Figure 17-1-1
Memory Map of Internal Flash EEPROM