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参数资料
| 型号： | MOC8204SR2M |
| 厂商： | Fairchild Optoelectronics Group |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | PHOTOCOUPLER DARL OUT GP 6SMD |
| 产品目录绘图： | Opto 6-SMD Package |
| 标准包装： | 1 |
| 通道数： | 1 |
| 输入类型： | DC |
| 电压 - 隔离： | 5300Vrms |
| 电流传输比（最小值）： | 20% @ 10mA |
| 输出电压： | 400V |
| 电流 - 输出 / 通道： | 2mA |
| 电流 - DC 正向(If)： | 60mA |
| Vce饱和（最大）： | 400mV |
| 输出类型： | 有基极的晶体管 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-SMD |
| 包装： | 标准包装 |
| 产品目录页面： | 2760 (CN2011-ZH PDF) |
| 其它名称： | MOC8204SR2M-ND MOC8204SR2MDKR |
September 2009
4N38M, H11D1M, H11D2M, H11D3M, MOC8204M
High Voltage Phototransistor Optocouplers
Features
■ High voltage:
– MOC8204M, BV CER = 400V
– H11D1M, H11D2M, BV CER = 300V
– H11D3M, BV CER = 200V
■ High isolation voltage:
– 7500 V AC peak, 1 second
■ Underwriters Laboratory (UL) recognized
File # E90700, Volume 2
General Description
The 4N38M, H11DXM and MOC8204M are photo-
transistor-type optically coupled optoisolators. A gallium
arsenide infrared emitting diode is coupled with a high
voltage NPN silicon phototransistor. The device is sup-
plied in a standard plastic six-pin dual-in-line package.
■
IEC 60747-5-2 approved (ordering option V)
Applications
■ Power supply regulators
■ Digital logic inputs
■ Microprocessor inputs
■ Appliance sensor systems
■ Industrial controls
Schematic
ANODE 1
CATHODE 2
N/C 3
?2007 Fairchild Semiconductor Corporation
6 BASE
5 COLLECTOR
4 EMITTER
Package Outlines
www.fairchildsemi.com
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6
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| MOC8204SR2VM | 制造商:Fairchild Semiconductor Corporation 功能描述:SURFACE MOUNT LEAD BEND, T&R, VDE - Tape and Reel |
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