参数资料
型号: MOC8204SR2M
厂商: Fairchild Optoelectronics Group
文件页数: 2/9页
文件大小: 0K
描述: PHOTOCOUPLER DARL OUT GP 6SMD
产品目录绘图: Opto 6-SMD Package
标准包装: 1
通道数: 1
输入类型: DC
电压 - 隔离: 5300Vrms
电流传输比(最小值): 20% @ 10mA
输出电压: 400V
电流 - 输出 / 通道: 2mA
电流 - DC 正向(If): 60mA
Vce饱和(最大): 400mV
输出类型: 有基极的晶体管
安装类型: 表面贴装
封装/外壳: 6-SMD
包装: 标准包装
产品目录页面: 2760 (CN2011-ZH PDF)
其它名称: MOC8204SR2M-ND
MOC8204SR2MDKR
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Device
Value
Units
TOTAL DEVICE
T STG
T OPR
T SOL
P D
Storage Temperature
Operating Temperature
Lead Solder Temperature (Wave Solder)
Total Device Power Dissipation @ T A = 25°C
Derate Above 25°C
All
All
All
All
-40 to +150
-40 to +100
260 for 10 sec
260
3.5
°C
°C
°C
mW
mW/°C
EMITTER
I F
V R
I F (pk)
P D
Forward DC Current (1)
Reverse Input Voltage (1)
Forward Current – Peak (1μs pulse, 300pps) (1)
LED Power Dissipation @ T A = 25°C (1)
Derate Above 25°C
All
All
All
All
80
6.0
3.0
150
1.41
mA
V
A
mW
mW/°C
DETECTOR
P D
V CER
Power Dissipation @ T A = 25°C
Derate linearly above 25°C
Collector to Emitter Voltage (1)
All
MOC8204M
300
4.0
400
mW
mW/°C
V
H11D1M, H11D2M
H11D3M
4N38M
300
200
80
V CBO
Collector
Base Voltage (1)
MOC8204M
400
V
H11D1M, H11D2M
H11D3M
4N38M
300
200
80
V ECO
Emitter to
Collector Voltage (1)
H11D1M, H11D2M,
7
V
H11D3M,
MOC8204M
I C
Collector Current (Continuous)
All
100
mA
Note:
1. Parameters meet or exceed JEDEC registered data (for 4N38M only).
?2007 Fairchild Semiconductor Corporation
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6
2
www.fairchildsemi.com
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