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参数资料
| 型号： | MP02G175-18 |
| 厂商： | DYNEX SEMICONDUCTOR LTD |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 170 A, 1800 V, SILICON, RECTIFIER DIODE |
| 封装： | MP02, 3 PIN |
| 文件页数： | 3/7页 |
| 文件大小： | 83K |
| 代理商： | MP02G175-18 |
3/7
www.dynexsemi.com
MP02XX175 Series
Units
mA
V
m
Test Conditions
At V
RRM, Tj = 150C
At T
vj = 150C. See note 1
At T
vj = 150C. See note 1
Parameter
Peak reverse current
Threshold voltage
Forward slope resistance
DYNAMIC CHARACTERISTICS
Symbol
I
RRM
V
TO
r
T
Max.
30
0.81
0.84
Min.
-
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
Fig. 3 Maximum (limit) forward characteristics
Fig. 4 Surge (non-repetitive) forward current vs time
(With 50% V
RRM
at T
case
= 150C)
0.5
1.0
1.5
2.0
2.5
Instantaneous forward voltage, VF - (V)
2000
1500
1000
500
0
Instantaneous
forward
current,
I
F
-
(A)
Measured under pulse conditions
Tj = 150C
0
2.0
1.0
3.0
4.0
5.0
6.0
Peak
half
sine
wave
forward
current
-
(kA)
110
1
2 3
5
50
10
20 30
ms
cycles at 50Hz
Duration
5
6
7
8
9
10
I 2
tvalue
-
(A
2s
x
10
4)
I2t
7.0
8.0
9.0
10.0
I2t = 2 x t
2
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