参数资料
型号: MP3506W
厂商: LITE-ON SEMICONDUCTOR CORP
元件分类: 桥式整流
英文描述: 35 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
封装: PLASTIC PACKAGE-4
文件页数: 2/2页
文件大小: 24K
代理商: MP3506W
DS21351 Rev. B-3
2 of 2
MP35005/W - MP3510/W
1.0
10
100
1000
0.2
0.6
1.0
1.4
1.8
I
,
INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
(A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
T = 25°C
j
0
100
200
300
400
1.0
10
100
I
,
PEAK
FOR
W
ARD
SURGE
CURRENT
(A)
FSM
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
Single half-sine-wave
JEDEC method
T = 50°C
C
0.01
0.1
1.0
10
0
40
80
120
I
,
INST
ANT
ANEOUS
REVERSE
CURRENT
(A)
R
PERCENT OF RATED PEAK REVERSE VOLTAGE (V)
Fig. 4 Typical Reverse Characteristics
T = 25°C
j
0
10
20
30
40
50
100
150
125
75
25
I
,
A
VERAGE
RECTIFIED
CURRENT
(A)
O
T , CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
C
Resistive or
inductive load
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