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参数资料
| 型号： | MP4412 |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 100 V, 0.3 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-32C1D, 12 PIN |
| 文件页数： | 7/8页 |
| 文件大小： | 233K |
| 代理商： | MP4412 |
MP4412
2006-10-27
7
rth – tw
T
ra
n
sie
nt
t
he
rm
al
res
istanc
e
r th
(°
C/
W
)
Ambient temperature Ta (°C)
PDT – Ta
To
ta
lpo
wer
di
ssi
pa
tion
P
DT
(W
)
Tch – PDT
Chan
n
el
te
mp
era
tu
re
in
cr
eas
e
T
ch
(°
C)
Channel temperature Tch (°C)
EAS – Tch
A
val
anc
he
en
er
gy
E
AS
(m
J)
)
Total power dissipation PDT (W)
Pulse width tw (s)
0
8
40
2
4
6
80
120
160
200
0
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-device operation
Attached on a circuit board
Circuit board
(4)
(3)
(2)
(1)
Attached on a circuit board
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-device operation
2
4
6
8
0
160
40
80
120
10
0
Circuit board
(1)
(2) (3) (4)
0.001
0.01
0.1
1
10
100
1000
Curves should be applied in thermal
limited area. (Single nonrepetitive pulse)
The figure shows thermal resistance per
device versus pulse width.
-No heat sink/Attached on a circuit board-
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-device operation
Circuit board
(1)
(2)
(3)
(4)
0.3
1
3
10
30
100
300
0
25
40
80
120
160
200
50
75
100
125
150
TEST CIRCUIT
TEST WAVE FORM
IAR
BVDSS
VDD
VDS
Peak IAR = 5 A, RG = 25
VDD = 25 V, L = 11.6 mH
15 V
=
DD
VDSS
2
AS
V
B
LI
2
1
Ε
相关PDF资料 |
PDF描述 |
|---|---|
| MP4502 | 3 A, 100 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR |
| MP4502 | 3 A, 100 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR |
| MP4503 | 4 A, 80 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR |
| MP4506 | 5 A, 100 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR |
| MP4506 | 5 A, 100 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR |
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