参数资料
型号: MP6K65TR
元件分类: JFETs
英文描述: POWER, FET
封装: MPT6, 6 PIN
文件页数: 2/6页
文件大小: 167K
代理商: MP6K65TR
MP6K65
Transistors
2/5
Electrical characteristics
(Ta=25
°C)
Parameter
Symbol
IGSS
Yfs
Min.
Typ.
Max.
Unit
Conditions
V(BR) DSS
IDSS
VGS (th)
RDS (on)
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Pulsed
±10
AVGS=±20V, VDS=0V
VDD 15V
RL
=4.3, RG=10
30
VID
=1mA, VGS=0V
1
AVDS=30V, VGS=0V
1.0
2.5
V
VDS
=10V, ID=1mA
63
88
ID
=3.5A, VGS=10V
93
130
m
ID=3.5A, VGS=4.5V
107
150
ID
=3.5A, VGS=4.0V
2.0
SID
=3.5A, VDS=10V
225
pF
VDS
=10V
38
35
pF
VGS
=0V
8
pF
f
=1MHz
VGS
=10V
RL
=8.57
RG
=10
12
ns
20
ns
4
ns
2.2
ns
0.8
nC
0.8
nC
VGS
=5V
nC
ID
=3.5A,
ID
=1.75A, VDD 15V
Body diode characteristics
(Source-Drain) (Ta=25
°C)
VSD
1.2
V
IS
=3.5A, VGS=0V
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Forward voltage
Pulsed
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